1DI300Z-120 Fuji Power Transistor Module

Visit http://www.uscomponent.com/buy/fuji/1di300z-120/ and buy 1DI300Z-120 to give your high power switching applications the improvement they need!

Introducing 1DI300Z-120 - a creation of Fuji that has enhanced the performance of countless high power switching applications today! This Fuji power transistor module is fully loaded with amazing features that cannot be spotted on those typical and weak models.

1DI300Z-120 weighs 5.34 lbs. and generates power of up to 300 Amps of collector current and collector emitter voltage of 1200. Indeed, it’s a perfect device for all your demanding applications.

One of the best features of 1DI300Z-120 is it’s ability to endure extreme temperatures. Whether on storage or junction temperature, this power module can fully function with ease even at 150 ^oC! But that’s not all!

Fuji 1DI300Z-120 also has an arrangement of 2 NPN silicon array transistors. With this component, its current rating dramatically improves and can be increased while maintaining safety and security to itself, to the application and even to nearby individuals!

ET439 Fuji Electric Power Transistor Module

Visit http://www.USComponent.com/buy/fuji/et439/ to get ET439, as this device is the perfect way to boost your UPS.

ET439 is the Fuji power transistor module your UPS needs! It is a high speed, high powered transistor module that is durable, reliable and easy to operate.

Fuji Electric ET439 has a low saturation voltage for higher efficiency which means that even at high voltage, there are no worries in using this device in high temperatures, as it prevents overheating.  No need to conceal the usual motor noise you get from other modules! This power transistor module has a high DC gain and discrete but super fast recovery free-wheel diode.  UL certification guarantees safety and reliability.

Fuji ET439 also has a high frequency operation which allows it to be used for many different purposes.  Aside from UPS, ET439 can be used for other different equipments such as forklifts.

EVM31-050A Fuji Power Transistor Module

Visit http://www.USComponent.com/buy/fuji/evm31-050a/ and see this Fuji EVM31-050A power transistor module.

EVM31-050A, an isolated-gate bipolar transistor or IGBT by Fuji, is your partner in renewable energy.

EVM31-050A provides electrical and thermal contact and insulation to the equipment or machinery it supplies power to, providing a higher power density making it more reliable compared to the usual semiconductors. This lightweight power transistor module has a collector current of 150A and a collector emitter voltage of 600V at only 5.34 lbs.  It features a freewheeling diode and high DC gain, with each terminal isolated from mounting plate and making it strong and steady, suitable for heavy duty equipment, machinery, or home appliance that operates on demand.

EVM31-050A can also be used for AC drives and motors offering wide power and operating voltages at different ranges. With its guaranteed strength and flexibility, it’s not a wonder why EVM31-050A is your best partner for all your suitable applications.

6MBI15GS-060 Fuji Electric Power Transistor Module

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Let Fuji Electric Power Transistor Module 6MBI15GS-060 boost the power of your welding machines. Known as one of the best transistor modules today, 6MBI15GS-060 has been proven to enhance both light and heavy applications. 6MBI15GS-060 weighs 5.34 lbs with a collector current of 15A and a collector emitter voltage of 600V.

Whether the application is used by professional welders, gasoline welders or market welders, 6MBI15GS-060 can give a huge contribution to the task. It has a compact single inline package, ensuring a complete set of components.

Fuji 6MBI15GS-060 has a strong module construction that improves its durability to last for a long time. It can operate when exposed to extreme temperatures, even as high as 125 ^oC.

With the unique features, 6MBI15GS-060 is also highly flexible to offer advantages to other applications like UPS, motor drive inverters and other industrial machines!

Buy Fuji Electric IGBT Power Transistor Modules and Power Semiconductor

Buy Fuji Electric IGBTs!

http://www.uscomponent.com/IGBT-Manufacturer/fuji/ We sell good quality and different kinds of Fuji Electric IGBT Power Transistor Modules!

Fuji has come a long way to become the giant electrical company it is today. Fuji, a spinoff company from Siemens, manufactures a multitude of electrical equipment and amongst it all are IGBTs. The IGBT is a high performance 6th generation IGBT/FWD chipset with a compact design that provides for greater power output. It has environmentally friendly modules with easy assemblage, solder-free options, and RoHS compliance. The IGBT turn-on switching characteristics include: improved noise-loss trade-off, reduced turn-on dv/dt, and excellent turn-on dic/dt. Turn-off switching characteristics include: soft switching behavior and turn-off oscillation free.

In 2006 Fuji Electric achieved world-leading level of power loss reduction and down-sizing “New Dual”, a New Product Line of Fifth Generation Fuji IGBT Modules U4 Series.

In 2008 Fuji Electric released New Fuji IGBT Module for High-capacity Industrial Equipment, a new product has been added to the line-up using FDT’s fifth generation IGBT, U4 series

In 2010 Fuji Electric released New Fuji High-Power 2-in-1 IGBT Module Series Designed for Parallel Connections

In 2011 Fuji Electric released New New V-Series Intelligent Power Modules Fuji IGBT Equipped with 6th-Generation IGBT Chips and Capable of the Highest Efficiency in the Industry

In 2011 Fuji Electric released New Fuji IGBT Module for Advanced Neutral Point Clamped (NPC) Circuits Series World’s First Module with a 3-Level Platform in a Single Package

In 2012 Fuji Electric announced it has developed EasyPIMTM insulated gate bipolar transistor (Fuji IGBT) modules fitted with 6th-generation IGBT chips and plans to commence a sales release of this new product lineup.

In 2012 Fuji Electric released a New high-speed, low-loss, Fuji IGBT Module output type intelligent power module incorporating various protective functions, and completed a product series

In 2012 Fuji Electric developed a chip which is constructed such that a Ni-plating electrode is formed on its surface electrodes. 2nd-generation IGBT chips feature an optimized surface trench cell structure, and employ a new field stop structure. Diode chips incorporate an optimized anode layer structure and utilize FZ wafers to improve forward characteristics and improve chip reliability. These improvements make it possible to reduce Fuji IGBT and diode chip sizes, increase system output, and facilitate miniaturization.

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