http://www.USComponent.com. We have been
selling IGBT power transistor modules for the last fourteen years from
different companies including Infineon and FZ1200R12KL4C is one of our best sellers. We sell original &
new parts only. You can trust us in terms of quality because we always try to
supply the authentic parts. All of our parts are backed up with 30 days
warranty. Please take a look at our website for stock check or technical
support or call us at +1 (281)899-0483.
Today we will
know about FZ1200R12KL4C, a 1200A/1200V IHM 130mm single switch IGBT power
transistor module with IGBT2 low loss and Emitter Controlled Diode. The weight
of this device is 8.82 lbs. It is the perfect choice for your industry
applications. Motor Control and Drives, Solar Energy Systems, Wind Energy
Systems, Uninterruptable Power Supplies, etc. are the applications it excels
at. It is manufactured by famous German manufacturer Infineon Technologies who
are specialist in making semiconductors and system solutions by targeting the
primary needs of our modern society. Infineon was known as Eupec previously in
the world of technology.
High
reliableness and solid module construction are the features for which
FZ1200R12KL4C is exceptional. This module is recognized by UL too. We will be
eligible to get some extra advantages if we use this transistor in our industry
applications. High power density can be achieved for compact inverter designs
by using this. Standardized housing is another attribute which makes
FZ1200R12KL4C unique.
We are going to
have a discussion about the implementation of FZ1200R12KL4C in solar inverters.
Solar power has
a large potential to provide the electricity needs of the world’s burgeoning
population. However, in 2008 solar-power supplied less than 0.02% of the
world's total energy supply.
A solar inverter converts variable direct current (DC) output of a
photovoltaic (PV) solar array panel to AC voltage. The energy produced from
solar panels is used to power household appliances directly, charge batteries
or feed electricity directly back to the grid in return for credit against
future power bills. All of these applications need AC voltage. The DC voltage
produced by the solar array must be converted into a desired well regulated AC
power by using an IGBT based inverter. FZ1200R12KL4C provides advantages in
solar inverter applications compared to other types of power devices. It
delivers low conduction and switching losses resulting in high inverter
efficiency. Benefits like high-current-carrying capability, gate control using
voltage instead of current and the ability to match the co-pack diode are found
when FZ1200R12KL4C is used as the power device in solar inverters.
FZ1200R12KL4C has some major advantages over
MOSFETs and bipolar transistors. First, it has very low on-state voltage drops
because of the conductivity modulation, in addition to superior on-state
current density. These factors allow manufacturers to fabricate devices with
smaller chip size and at lower cost. Second, these boast low driving power and
simple driving circuits due to the input MOS gate structure. It is simpler to
control compared to current controlled devices such as bipolar transistors.
Third, FZ1200R12KL4C has
fantastic forward and reverse blocking capabilities. These characteristics
encourage designers to select this IGBT module for solar inverter applications.
For more Eupec
Infenion IGBTs visit http://www.uscomponent.com/IGBT-Manufacturer/eupec-infineon/.
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