Although the most modern generations of IGBTs and MOSFETs have improved tolerance and a very low probability of shutdown failures, it is still important to understand the conditions that should be avoided. Recognizing these issues early can significantly extend the lifespan of power semiconductors such as IGBTs and MOSFETs. It also helps engineers determine when these devices should be replaced once they reach their operational limits.
Essentially, the switching and turn-on behavior of IGBTs and MOSFETs under overload conditions does not differ greatly from their standard operation under nominal conditions. However, to prevent exceeding the maximum junction temperature and to ensure safe operation, the overload range must be limited. Excessive load current can increase power dissipation inside the device and may eventually lead to damage or destruction of components such as diodes due to dynamic failure mode effects.
In terms of short circuit conditions, both IGBTs and MOSFETs are generally designed with short-circuit capability. This means they can withstand short circuits under specific conditions and can be actively turned off without damaging the power semiconductor devices. Proper protection circuits and system design are still essential to prevent long-term damage and maintain reliable operation in power electronics systems.
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