Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has expanded its portfolio of IGBT modules by introducing discrete devices rated up to 1200 V and 75 A. These devices are co-packaged with a high-rated diode in a TO-247PLUS package.
The new TO-247PLUS packages address the growing demand for higher power density and improved efficiency in discrete packages. Typical applications requiring a 1200 V blocking voltage and high power density include photovoltaic inverters, uninterruptible power supplies (UPS), and other power conversion units. Additional applications include battery charging systems and energy storage solutions.
Compared to a standard TO-247-3 package, the new TO-247PLUS package can provide nearly double the current rating. By eliminating the screw hole found in the standard TO-247 package, the PLUS package offers a larger lead-frame area, allowing the accommodation of larger IGBT chips. For the first time, up to 75 A at 1200 V is available in IGBTs with the same small footprint.
The larger lead frame also provides lower thermal resistance, resulting in improved heat dissipation. For designers aiming to reduce switching losses, the 4-pin TO-247PLUS package includes an additional Kelvin emitter source pin. This enables a more controlled gate-emitter loop, minimizes loop inductance, and reduces total switching energy losses (Ets_{ts}ts) by more than 20%.
The 1200 V IGBTs available in TO-247PLUS 3-pin and 4-pin packages can be used to increase overall system power density. They also allow designers to reduce the number of devices used in parallel, improve system efficiency, and enhance thermal performance.
No comments:
Post a Comment