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Monday, May 20, 2019

HEVS drives IGBT Crazy

Thirty years ago, back to the first time, the IGBT was commercialized, IGBT devices have a
voltage breakdown of 1100V. Right from then, IGBT power range has developed to 400-
6,500V, making IGBTs to be a part of all power electronics applications and strongly impacted
the HEV/EV industry.

Mass production and innovations of HEV/EV justify the promising future of IGBT. In fact, by
2020, it is expected that HEV/EV represents almost 50% of the IGBT market.
Major contributor in the IGBT market that exercises the IGBT application on HEVS are Chinese
companies. Since they are willing to compete with the European and Japanese players and
challenged them with the latest innovative technologies at the module level, especially the

packaging.

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