MOSFET and IGBT Gate Drivers Market 2016 Major Manufacturers, Growth Factors, Industry Size Analysis to 2021

MOSFETand IGBT Gate Drivers Market report focuses on the major drivers and restraints for the key players. It also provides granular analysis of the market share, segmentation, revenue forecasts and geographic regions of the market.  The MOSFET and IGBT Gate Drivers Market research report is a professional and in-depth study on the current state of the MOSFET and IGBT Gate Drivers Industry.

The MOSFET and IGBT Gate Drivers Market to grow at a substantial CAGR during the forecast period.

The report comprises of various profiles of fundamental market players of MOSFET and IGBT Gate Drivers market. This includes following firms:

·         Intersil Corporation

·         ON Semiconductor

·         Maxim Integrated Products

·         Microchip Technology.

·         Clare, Inc

With thorough market segment in terms of different Countries, this report divides the global market into a few key countries, with sales (consumption), revenue, market share, and growth rate of MOSFET and IGBT Gate Drivers market in these countries over the forecast period.

·         North America

·         Europe

·         China

·         Japan

·         Southeast Asia

·         India

Split by Product Types, with production, revenue, price, market share and growth rate of each type, can be divided into

Half-Bridge Driver

1 Channel

2 Channels

4 Channels

Isolated Gate Driver

1 Channel

2 Channels

4 Channels

Low-Side Driver

1 Channel

2 Channels

4 Channels

Split by applications, this report focuses on consumption, market share and growth rate of MOSFET and IGBT Gate Drivers in each application, can be divided into

·         Power System

·         Automotive

·         Communication System

·         Military

·         Industrial Equipment

The report covers the market projection and analysis of MOSFET and IGBT Gate Drivers Market Research Report 2016 on a global as well as regional level.

The Global MOSFET and IGBT Gate Drivers Market Research Report 2016 highlights key dynamics of MOSFET and IGBT Gate Drivers sector. The current market scenario and future prospects of the sector has also been studied. Additionally, prime strategical activities in the market which includes product developments, mergers and acquisitions, partnerships, etc., are discussed.

IGBT and Super Junction MOSFET Market Driven by Its Cost Effective and Highly Compact Design

Albany, NY - - 02/03/2017 - Insulated gate bipolar transistors (IGBTs) and super junction metal oxide field effect transistors (MOSFETs) are widely used as switches in a variety of power electronics systems, including wind turbines, uninterrupted power supplies (UPS), rail tractions, PV inverters, electric and hybrid electric vehicles, and a host of other industrial applications. IGBTs and super junction MOSFETs compete against other switching devices and technologies such as traditional MOSFETs, gallium nitride, and silicon carbide owing to higher efficiency and faster switching. IGBTs and super junction MOSFETs are preferred especially in applications requiring high input impedance and high voltage.

The report states that factors such as the rising use of IGBTs and super junction MOSFETs in electric and hybrid vehicles and the rising focus on greater energy efficiency are some of the factors propelling the global IGBT and super junction MOSFET market. The market holds excellent growth opportunities in the flourishing market for smart grids. However, the market is projected to be held back to a certain extent owing to the stiff competition from power semiconductors.

The report examines the global IGBT and super junction MOSFET market by segmenting it on the basis of: product type, application, and geography.

Of the key applications of IGBTs, the industrial segment led the market in 2012, followed by the segment of motor drives. However, over the report’s forecast period, the segment of electric and hybrid electric vehicles is expected to expand at the fastest pace, a remarkable 21.1% CAGR.

In the super junction MOSFET category, the segment of chargers, adapters, and converters accounted for the largest share in the global market in 2012. Similar to the IGBT market, the market for super junction MOSFET is projected to witness the fastest development in the electric and hybrid electric vehicle segment over the report’s forecast period. The segment is projected to expand at an exponential 30.0% CAGR in the aforementioned forecast period.

On the basis of geography, the market is dominated by Asia Pacific, which accounted for a massive 39% of the global market in 2013. Asia Pacific is also projected to be the most rapidly expanding market over the report’s forecast period, owing to factors such as the increased demand for electric vehicles, the flourishing energy industry, and rising investments in the sector of high-speed rail. The thriving electronics manufacturing industry in countries such as Taiwan, China, and South Korea is also expected to boost the market for IGBT and super junction MOSFET in the region.

Some of the most influential vendors in the market are ABB Ltd., Semikron Inc., Fairchild Semiconductor International Inc., Infineon Technologies AG, Mitsubishi Electric Corporation, Hitachi Power Semiconductor Device Ltd., Toshiba Corporation, STMicroelectronics N.V., Fuji Electric Co. Ltd., and Vishay Intertechnology Inc.

A recent market research report published by Transparency Market Research gives a thorough overview of the global IGBT and super junction MOSFET market and the market’s crucial elements. The report, titled „IGBT and Super Junction MOSFET Market – Global Industry Analysis, Size, Share, Growth, Trends and Forecast 2013 – 2019,” projects that the market will expand at a healthy 11.60% CAGR from 2013 to 2019. If the projections hold true, the market will rise to a valuation of US$10.1 bn by 2019, up from US$4.8 bn in 2012.

IGBT Market Analysis and Value Forecast Snapshot by End-use Industry 2015-2025

Insulated Gate Bipolar Transistor formally known as IGBT is a power electronic semiconductor device. This device have its major application in switches, phase control and pulse modulation because of its high efficiency and fast switching. Electric power is a basic requirement of modern society and absence of electricity will create a huge loss and damage to human life as well as society. IGBT helps in reducing the congestion in power supply which will results into smooth electricity supply. IGBT have applications across various industrial verticals because of high power efficiency, ability to work in low power and high blocking voltage. IGBT is coming into focus because of its ability to lower switching loss which reduces thermal stress on electric device and results into extended device life and provides greater reliability. This market is very attractive and projected to grow rapidly because of increasing investment in Research and development of IGBT chips, module optimization for reduction in power consumption, modified chip density and thermal resistivity. These all features of IGBT are helping in strengthening the market position of IGBT power electronic semiconductor device market.

IGBT Market Dynamics

Global IGBT market is currently in its growth stage and shows significant potential across various industrial verticals. Major factors which are driving the growth of global IGBT market are increasing demand of replacement of old power infrastructures in developed regions such as North America and Europe, increasing government incentives and growing need of improved power cycling capacity and thermal capacity. Apart from these, increasing demand of energy efficient electronic devices, IGBT’s ability to improve efficiency of several electronics devices and also ability to play important role in technological advancement of power electronic has further fuelled this market growth. Factors which are restraining the growth of global IGBT market are lack of awareness, high cost, high initial investment, lack of stable characteristic of device in high temperature and economic slowdown. However, this restraints are expected to minimize their impact on market for long run. Global IGBT market have opportunity in future with deployment of smart grid, which will helps in boosting global IGBT market.

IGBT Market Segmentation

Global IGBT market is segmented on the basis of applications, types and regions. On the basis of applications the global IGBT market is sub segmented into electric and hybrid electric vehicle (EV/HEV), industrial motor drives, traction, transportation, HVAC, renewable energy, UPS, series compensation and other applications. Among all this applications demand of EV/HEV is estimated to lead growth of global IGBT market during forecasted period. Rapid growth in green energy sector is also boosting the global IGBT market. On the basis of types the market is sub segmented into IGBT module and discrete IGBT.

Geographically, the IGBT market is sub segmented into seven global regions, North America, Latin America, Asia – Pacific (excluding Japan), Japan as a separate region, Western Europe, Eastern Europe and Middle East and Africa Region. Europe region is dominating the present global IGBT market in terms of market value with Germany and U.K leading the market growth. Asia – Pacific is estimated to be fastest growing region during forecasted period with technological development in china and Japan market is also expected to grow for IGBT. North America and other remaining regions are also projected to be very promising market for IGBT. Demand in Middle East region will further fuelled the global IGBT market growth.

IGBT Market Key Players

Key players of Global IGBT market includes Fujitsu Ltd., Infineon Technologies AG, STMicroelectronics N.V., NXP Semiconductors N.V., Vishay Intertechnology, Fairchild Semiconductor International, Inc., Toshiba Corporation, Inc., ROHM Co. Ltd., Fuji Electric Co. Ltd and Renesas Electronics Corporation, among others. These key players are following trend of large scale collaborations and partnership. These strategies will be beneficial for them in expanding their global footprints and increasing global market share.

IGBT Market Outlook 2020 - Top Companies, Trends and Future Prospects Details for Business Development

IGBT  market research report provides granular analysis of the market share, segmentation, revenue forecasts and geographic regions of the market. IGBT  Market report 2016-2020 focuses on the major drivers and restraints for the key players.  The IGBT market research report is a professional and in-depth study on the current state of IGBT Warming Devices Industry.

Analysts forecast the global IGBT Warming Devices market to grow at a CAGR of 9.07 % during the period 2016-2020.

The research report covers the present scenario and the growth prospects of the global IGBT  industry for 2016-2020.

An IGBT is a semiconductorcomponent used in power electronic devices across several industries because it has high-power efficiency, high blocking voltage, and the ability to work on low power. An IGBT module is formed by arranging, in parallel, several discrete IGBTs in a single casing. These modules are used in industrial motors, railway traction, power supplies, renewable energy, and consumer appliances. These modules are also used to drive electric motors in both automotive and industrial applications.

Key Vendors of  IGBT Market:

·         Alpha and Omega Semiconductor Ltd

·         International Rectifier

·         Renesas Electronics Corp.

·         STMicroelectronics N.V.

·         Toshiba Corp.

The IGBT market report also presents the vendor landscape and a corresponding detailed analysis of the major vendors operating in the market. IGBT market report analyses the market potential for each geographical region based on the growth rate, macroeconomic parameters, consumer buying patterns, and market demand and supply scenarios.

IGBT Market Driver:

Increasing Demand for Energy-efficient Electronic Products.

IGBT Market Challenge: 

Low Demand Due to Global Economic Slowdown.

IGBT Market Trend: 

Increasing Focus on Clean Energy Solutions.

Geographical Segmentation Of IGBT Market:

·         IGBT market in Americas

·         IGBT market in APAC

·         IGBT market in EMEA

The report provides a basic overview of the IGBT industry including definitions, segmentation, applications, key vendors, market drivers and market challenges. The IGBT market analysis is provided for the international markets including development trends, competitive landscape analysis, and key regions development status

Through the statistical analysis, the report depicts the global IGBT market including capacity, production, production value, cost/profit, supply/demand and import/export. The total market is further divided by company, by country, and by application/type for the competitive landscape analysis.

Global IGBT-based Power Module Market to Grow 8.45% by 2020 - Global Industry Analysis, Size, Share, Trends and Challenges

IGBT-based Power Module Market report 2016-2020 focuses on the major drivers and restraints for the key players. IGBT-based Power Module research report also provides granular analysis of the market share, segmentation, revenue forecasts and geographic regions of the market.  The IGBT-based Power Module market research report is a professional and in-depth study on the current state of IGBT-based Power Module Industry.

Analysts forecast the global IGBT-based Power Module market to grow at a CAGR of 8.45% during the period 2016-2020.

The IGBT-based Power Module Market research report covers the present scenario and the growth prospects of the global IGBT-based Power Module industry for 2016-2020.

An IGBT chip has high power efficiency, high blocking voltage, and the ability to work on low power. IGBT and diode dies are combined to form power modules. These are large arrangements of basic building blocks of power electronic equipment. These assembled stacks are configured to cope with the needs of the highest power applications. These modules are used in industrial motors, railroad traction, power supplies, renewable energy, and consumer appliances. These modules are also used to drive electric motors for both automotive and industrial applications.

Key Vendors of IGBT-based Power Module Market:

·         Fairchild Semiconductor International

·         Fuji Electric

·         Infineon Technologies

·         Mitsubishi

·         SEMIKRON

·         STMicroelectronics

And many more…

IGBT-based Power Module market report provides key statistics on the market status of the IGBT-based Power Module manufacturers and is a valuable source of guidance and direction for companies and individuals interested in the IGBT-based Power Module industry.

The IGBT-based Power Module market report also presents the vendor landscape and a corresponding detailed analysis of the major vendors operating in the market. IGBT-based Power Module market report analyses the market potential for each geographical region based on the growth rate, macroeconomic parameters, consumer buying patterns, and market demand and supply scenarios.

Regions of IGBT-based Power Module market:

·         Americas

·         APAC

·         EMEA

Through the statistical analysis, the report depicts the global IGBT-based Power Module market including capacity, production, production value, cost/profit, supply/demand and import/export. The total market is further divided by company, by country, and by application/type for the competitive landscape analysis.

IGBT Chip Market Reports and Cost Analysis by Manufacturers

IGBT Chip Market research report is a professional and in-depth study on the current state of this market. Various definitions and classification of the industry, applications of the industry and chain structure are given. Present day status of the IGBT Chip market in key regions is stated and industry policies and news are analysed.

In depth analysis of an industry is a crucial thing for various stakeholders like investors, CEOs, traders, suppliers and others. The IGBT Chip industry research report is a resource, which provides technical and financial details of the industry.

Next part of the IGBT Chip market analysis report speaks about the manufacturing process. The process is analysed thoroughly with respect to three points, viz. raw material and equipment suppliers, various manufacturing associated costs (material cost, labour cost, etc.) and the actual process.

Major Key Players are Analysed in the IGBT Chip Market Report:

·         Infineon

·         Fairchild Semiconductor

·         ON Semiconductor

·         STMicroelectronics

·         Renesas Electronics

·         Toshiba

·         ROHM

·         Vishay

·         Hitachi

·         Fair-Rite Asia

After the basic information, the report sheds light on the production. Production plants, their capacities, production and revenue are studied. The IGBT Chip market consumption for major regions is given. Also, the IGBT Chip industry growth in various regions and R&D status are also covered such as:

·         United States

·         China

·         Europe

·         Japan

Further in the report, the IGBT Chip industry is examined for price, cost and gross value. These three points are analysed for types, companies and regions. In continuation with this data sale price is for various types, applications and region is also included.

To provide information on competitive landscape, this report includes detailed profiles of IGBT Chip market key players. For each player, product details, capacity, price, cost, gross and revenue numbers are given. Their contact information is provided for better understanding.

IGBT Based Power Module Market Research Report Now Available at Research Corridor

Research Corridor has published a new research study titled “IGBT Based Power Module Market – Growth, Share, Opportunities, Competitive Analysis and Forecast, 2015 – 2022”. The IGBT Based Power Module market report studies current as well as future aspects of the IGBT Based Power Module Market based upon factors such as market dynamics, key ongoing trends and segmentation analysis. Apart from the above elements, the IGBT Based Power Module Market research report provides a 360-degree view of the IGBT Based Power Module industry with geographic segmentation, statistical forecast and the competitive landscape.

Geographically, the IGBT Based Power Module Market report comprises dedicated sections centering on the regional market revenue and trends. The IGBT Based Power Module market has been segmented on the basis of geographic regions into North America, Europe, Asia Pacific and Rest of the World (RoW). The RoW segment consists Latin America and the Middle East & Africa. The IGBT Based Power Module market has been extensively analyzed on the basis of various regional factors such as demographics, gross domestic product (GDP), inflation rate, acceptance and others. IGBT Based Power Module Market estimates have also been provided for the historical years 2013 & 2014 along with forecast for the period from 2015 – 2022.

The research report also provides a comprehensive understanding of IGBT Based Power Module Market positioning of the major players wherein key strategies adopted by leading players has been discussed. The IGBT Based Power Module industry report concludes with the Company Profiles section which includes information on major developments, strategic moves and financials of the key players operating in IGBT Based Power Module market.

IGBT and CT Scanners

The IGBT has been used since the early deployment of CT scanners for the control of the gantry on which the patient is reclining as described below.

Advanced medical diagnostic equipment has revolutionized the quality of care for our society. Non-invasive imaging of the interior of the body enables the surgeon to perform operations while minimizing damage to adjacent tissue and organs. It is also used in the power supply for X-ray and Ultrasound machines. In addition, hundreds of thousands of lives are being saved due to the availability of portable defibrillators which require IGBTs for delivering the controlled shock to the patient of cardiac arrest as discussed below.

Computed tomography (CT) generates a three dimensional image of a patient using a large series of two dimensional images taken around a single axis of rotation. The image is generated by viewing the patient using x-ray imaging from numerous angles. A single plane of a patient is scanned from various angles in order to provide a cross-sectional image of the internal structure of that plane. A three-dimensional view can then be created by mathematical analysis that combines the images. The gantry on which the patient is reclining is positioned using closed loop feedback control of motors in order to accurately move and position the patient.

An IGBT-based motor drive is employed by all manufacturers, such as GE, Philips, and Siemens, for precise and controlled movement of the gantry. The CT scanner contains an X-ray tube with detectors located diametrically opposite the X-ray source which are rotated around the patient to generate a section image. CT scanners can provide detailed cross-sectional images of nearly every part of the human body including the brain, neck, shoulders, cervical spine, heart, lungs, abdomen, liver, kidney, pelvis, etc.

IXYS received FDA approval for its IGBT in portable defibrillators, making it the leading provider of chips for defibrillators made in North America. IXYS’ market position is bolstered by regulatory hurdles (FDA approval) that essentially act as a barrier to entry. Additionally, IXYS’ power semis are being designed into advanced diagnostic systems (MRIs, x-rays, ultrasound, surgical lasers); the chips control the immediate high voltage power demands of this equipment.

www.USComponent.com had been selling IGBT power transistor modules since 2001. Its customer includes GE, Philips, Toshiba and Siemens and other leading companies.

www.USComponent.com have a Quality Control Team like no other. This means that we know how to work hard in order to ensure to make sure that the quality of all of the parts we’re selling is high. Because we only sell new and original electronic parts, we provide our customers with a 30-day warranty. And because we have connections with IGBT power transistor modules manufacturers, OEMs and distributors, we’re able to pass any savings on to our customers, giving them a lower price while still providing them with the quality products they deserve. Our inventory is carefully managed and held to the highest standards, and stored in a controlled environment warehousing facility.