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Friday, May 24, 2019

IGBT on Wind Energy Systems

Many countries around the world now are looking at investing in renewable energy sources. Governments are considering renewable energy as one of their strategy for developments. The implementation of renewable electricity sources promotes market opportunities for IGBT, especially for offshore wind turbines. These turbines need IGBT to run in rugged environments to deliver maximum efficiency to grid stability.

Now, with an increasing number of these energy resources, together with the government eagerness the invest, the IGBT market is expecting to ramp up and grow in a large-scale. These actions open the opportunity for dominant players such as Infineon Technologies among the other in the IGBT market to potentially increase their businesses.

Monday, May 20, 2019

HEVS drives IGBT Crazy

Thirty years ago, back to the first time, the IGBT was commercialized, IGBT devices have a
voltage breakdown of 1100V. Right from then, IGBT power range has developed to 400-
6,500V, making IGBTs to be a part of all power electronics applications and strongly impacted
the HEV/EV industry.

Mass production and innovations of HEV/EV justify the promising future of IGBT. In fact, by
2020, it is expected that HEV/EV represents almost 50% of the IGBT market.
Major contributor in the IGBT market that exercises the IGBT application on HEVS are Chinese
companies. Since they are willing to compete with the European and Japanese players and
challenged them with the latest innovative technologies at the module level, especially the

packaging.

Latest on China IGBT Market

Countries with an advanced level of technology such as Japan, Europe among others, the
demand for IGBT is quite rising that results in increasing competitiveness in the international
market. However, major international manufacturers in the market offer cost relatively higher
compare to the Chinese manufacturer. But with the continuous development Chinese IGBT, they
are now in the edge of being one of the major players in the IGBT industry.

Lately, a report from Trendforce states that the China IGBT market scale in 2018 is expected
to be RMB 15.3 billion, showing a yearly increase of 19.91% and continue to stand at RMB
52.2 billion by 2025 with a CAGR of 19.11%. The rising numbers of HEV/EV productions
drive the growth of the Chinese IGBT market. According to the data published by China
Automotive Industry Association, the China HEV/EV production rose from 17,000 cars in 2013

to 780,000 cars in 2017, with CAGR coming to 160.26%.

Thursday, May 16, 2019

IGBT (Insulated-gate Bipolar Transistor) Trend 2019

IGBT (Insulated-gate Bipolar Transistor) is a simple device commonly used as an electronic
switch which came to combine high efficiency and fast switching. The target application such
as electric vehicles and wind farms are helping to make it highly demand nowadays in global
Market.

The major contributor of global IGBT is China due to rampant usage of a high-speed train, NEV,
photovoltaic and inverters on their technologies, as well as the initiatives of the government in
promoting the use of renewable energy sources yet, they are expecting the market growth
could be hindered due to an unexpected increase of over demand for IGBT. Nonetheless,
according to the latest reports, the IGBT localization ratio is picking up a pace and would further
fuel market growth.

The global IGBT market is controlled by four major players and is holding a major share of
the market value. These are Infineon Technology, Fuji Electric, Semikron, and Mitsubishi.
Furthermore, these companies are also leading the Chinese IGBT market. However, in line
with the strong competition, Chinese IGBT market is now looking at a different scenario in the
near future as their localization rate is improving and domestic companies are improving them

products to make their presence felt in the domestic market.

Thursday, May 9, 2019

PM15CSJ060 Mitsubishi IGBT Power Module

Mitsubishi PM15CSJ060 is the Intelligent Power Module you need to elevate the performance level of your UPS. This three-phase IGBT inverter output module weighs 0.13 lbs. with a collector current amount of 15A and a collector-emitter of 600V.

One of the best things you can get from PM15CSJ060 is its unique built-in control circuits that allow the power module to create its own protection system! This defense system includes reliable shields against short circuit, over current, over temperature, under voltage, or any electrical malfunctions.

Other special features of PM15CSJ060 are its “Complete Output Power Circuit” and “Gate Drive Circuit,” which both serve as enhancement force in transcending the power and drive capacity of UPS. Indeed, these unique abilities have led PM15CSJ060 to become a standout Mitsubishi intelligent power module these days.

With PM15CSJ060, expect your UPS to transform into an efficient, durable, and a cost-effective apparatus.

Wednesday, May 8, 2019

PM100RSE120 Mitsubishi IGBT Power Module

PM100RSE120 is no doubt, the Mitsubishi Intelligent Power Module to choose if you want to enhance your servo drives’ performance level. Weighing a light weight of 2.03 lbs, with a collector current amount of 100A and a collector voltage of 1200V, PM100RSE120 is definitely suitable to any type of servo drives.

PM100RSE120 is a flat-base type insulated package. Experts considered this as one of the best Mitsubishi products nowadays. Since it became available in the market, it has been helping various servo drives consumers with its durability, cost-effectiveness, and unmatched boosting abilities!

With Mitsubishi PM100RSE120 being highly efficient, you might change your mind from disposing your servo drives to upgrading it. The truth is, this is like hitting two birds in one stone! You buy it once, and you gain two benefits – upgraded capacity and proven durability!

Sunday, May 5, 2019

CM400DY-24NF Mitsubishi IGBT Power Transistor Module

Mitsubishi CM400DY-24NF is the best choice to boost the capacity of your general purpose inverters and eliminate most of its problems. This Mitsubishi IGBT power transistor module is designed to withstand heavy operations. It weighs as light as 1.28 lbs., with a collector-emitter amount of 1200V and a 400A collector current.

CM400DY-24NF has a unique design. Each of its modules consists of two IGBT Transistors in a half-bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode. This is a one-of-a-kind design that allows the power module to function in the long run without deteriorating its superb performance.

Expect three benefits of using CM400DY-24NF. First is its high efficiency to upgrade the performance level of various applications, not just general purpose inverters but also Servo controls. Second is its unmatched durability to function for a long period of time and lastly is its cost-effectiveness.