FF200R17KE3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) module produced by Infineon Technologies, a leading manufacturer of power electronics components. It is designed for use in high-power switching applications, such as motor drives, renewable energy systems, and industrial automation.
The IGBT module has a current rating of 200A and a voltage rating of 1700V. It consists of two IGBTs in a chopper configuration, with each IGBT equipped with a freewheeling diode. The module also includes a temperature sensor for over-temperature protection and a built-in snubber circuit to reduce switching losses.
The FF200R17KE3 IGBT module is designed with low-on resistance and high-speed switching characteristics, which result in low power dissipation and high efficiency. It is also designed with a compact and robust package, which provides excellent thermal performance and high resistance to mechanical stress.
The module is also equipped with an electrical interlock system that prevents incorrect module insertion, ensuring safe and reliable operation.
Overall, the FF200R17KE3 IGBT module is a high-performance device that provides efficient and reliable power switching capabilities in high-power applications. Its high current and voltage ratings, combined with its low-on resistance and high-speed switching characteristics, make it suitable for use in demanding power electronics applications.
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