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Friday, August 2, 2024

BSM200GA170DN2S Infineon IGBT by USComponent.com

The Infineon BSM200GA170DN2S is a high-efficiency IGBT (Insulated Gate Bipolar Transistor) module designed for demanding power applications. This module features a 1700V voltage rating and a 200A current rating, making it suitable for high-power industrial and renewable energy systems. It is renowned for its low conduction losses and fast switching performance, which enhance overall system efficiency and reduce energy consumption. The BSM200GA170DN2S also includes advanced thermal management for reliable operation under high temperatures. Its robust design and high performance make it ideal for applications such as motor drives, power supplies, and other power conversion systems.

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