The FZ1200R17KE3_B2 is an IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon Technologies, known for its high power and efficiency. This module is designed for demanding industrial applications, featuring a voltage rating of 1700V and a current rating of 1200A. It is part of Infineon's EconoDUAL™ 3 series, which is known for its reliable performance and compact design.
The FZ1200R17KE3_B2 combines the fast switching and high efficiency of IGBTs with the high current capacity of a bipolar transistor, making it ideal for use in applications such as industrial drives, renewable energy systems, and power inverters. The module is built with advanced trench field-stop IGBT technology, which reduces switching losses and improves overall efficiency. Additionally, it features integrated freewheeling diodes that enhance performance and reliability.
This IGBT module also offers excellent thermal management, thanks to its low thermal resistance and high thermal cycling capability. The robust construction ensures durability and longevity, even in harsh operating conditions. With its combination of high power density, efficiency, and reliability, the FZ1200R17KE3_B2 is a top choice for engineers seeking to optimize the performance and efficiency of their power electronic systems.
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