The Japanese giant Mitsubishi is known worldwide for its superior quality in terms of its IGBT modules, today we will discuss the CM150DY-12NF which is a dual IGBT module and Mitsubishi CM150DY-12NF has a number of advantages over the MOSFET and BJT, these are its advantages: 1. It has a very low voltage drop due to the modulation of its conductivity and has a static current density so small that even the chip size could be reduced 2. Low conduction power and connectivity, due to the structure of the MOS input and its bridge, it can be easily controlled by comparison (transistors and BJT) in high voltage and high current 3. Wide SOA, it has a much higher conduction capacity compared to bipolar transistors and excellent reverse blocking capability. Product description IGBTMOD-NF dual-module series, 150 amperes / 600 volts, each module consists of two IGBT Transistors in a half-bridge configuration, acda transistor has a fast recovery fast reverse connectivity and a loose wheel diode.
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