Insulated-Gate Bipolar Transistor (IGBT) is a
three-terminal electronic switching device, which is a combination of Metal–Oxide–Semiconductor
Field-Effect Transistor (MOSFET) and Bipolar Junction Transistor (BJT) in
monolithic form. It allows the flow of power only when the gate terminal is
connected to the positive supply of the source. Moreover, it is a minority-carrier
device with several benefits such as large bipolar current-carrying capability
and high input impedance. IGBT aims to deliver faster switching rate and higher
efficiency to enable proper operations at high voltage or high current. In
addition, it can be used for dynamic breaking, where the power is dissipated by
resistors that are connected in parallel or in series. It is widely used in
high power rating applications, which include electric vehicle motor drives,
inductive heating cookers, and appliance motor drives.
IGBT is widely used in various applications
such as renewable energy, High Voltage Direct Current (HVDC), motor drive, and
consumer electronics, owing to its faster switching rate, high efficiency, and
improved durability. Moreover, it supports high input impedance and improved
parallel current sharing; thereby, fueling the market growth. However,
performance issues, such as current leakage and breakdown, hamper the market
growth. Proactive government initiatives to establish HVDCs & smart grids
and increase in demand for consumer electronic are expected to provide
lucrative opportunities to market players in the near future.
The
world IGBT market is segmented on the basis of type, power rating, application,
and geography. The type segment is bifurcated into discrete IGBT and IGBT
modules. The power rating segment includes high power, medium power, and low
power IGBTs. Based on application, the market is segment into energy &
power, consumer electronics, inverter & UPS, electrical vehicle, industrial
system, and others. Based on geography, the market is analyzed into North
America (U.S., Mexico, and Canada), Europe (UK, Germany, France, and rest of
Europe), Asia-Pacific (China, India, Japan, South Korea, and rest of
Asia-Pacific), and LAMEA (Latin America, Middle East, and Africa).
The
major companies profiled in the report include ABB Group, STMicroelectronics
N.V., Toshiba Corporation, IXYS Corporation, Renesas Electronics Corp, Semikron
International GmbH, Mitsubishi Electric Corp., Infineon Technologies AG, Fuji
Electric Co. Ltd., and NXP Semiconductors N.V.
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