IGBT Academic-Engineer Report Until 2021

 This report provides accurate forecasts for the year 2021 by engineers in the market as well as the opinion of experts from credible sources, and the recent development of R&D in the industry that currently serves as a backbone of the report of the IGBT industry. For the help of new participants in this technology market, this report offers a competitive scenario of the IGBT industry with growth trends, structure, drivers, scope, opportunities, challenges, landscape analysis of suppliers, etc. report. The global IGBT market is expected to increase at a stable rate and obtain a CAGR (compound annual growth rate) of 11.5% during 2017-2021. Key questions answered in the IGBT market report: What will be the total coverage until 2012 and what will be the growth rate? What are the key market trends? What is driving this market? What are the challenges for the growth of the IGBT market? Who are the key suppliers in this market? What are the market opportunities and threats that key suppliers face? What are the strengths and weaknesses of the key suppliers? In the end, our IGBT market report is the result of our experts' dedication to information that can be useful for everyone.

IGBT Converters Are Going To Be Used For SBB Locos By ABB

 For locomotives, which are driven by diesel or electricity, EMU, and DEMU vehicles with AC Traction Motors, a new microprocessor-based AC-AC Traction System (MAS) offers the latest in technology combining IGBT based Traction Converter with DSP and microprocessor-based embedded controls. A microprocessor-based Locomotive Control system is used in conjunction with IGBT based traction converter to implement this solution. Federal Railway of Switzerland has granted ABB Switzerland an agreement valued at approximately SFr 69.2m ($US 75.4m) to provide the latest traction apparatuses for its convoy of 119 Re460 electric locomotives as a section of an SFr 230m middle-life renovation program. According to this contract, 202 IGBT traction converters will be supplied by ABB with an option for 38 additional units that are water-cooled. As per SSB’s opinion, it will be possible to reduce traction power consumption by 27GWh per year by converting the convoy to IGBT which is sufficient electricity to power 6750 homes.

Fuji Electric Announces New IPM Modules

 Fuji Electric Corp has added the newest Small Intelligent Power Module (IPM) as part of the new 7th Generation X-Series Portfolio.

The latest Fuji IPM modules come with a control IC providing IGBT drive and protection circuits, making the design of peripheral circuits straightforward and ensuring high system reliability. This new P642 IPM features a product line-up ranging from 50A to 75A at 650V expanding the 15A to 35A at 600V range of the P633A IPM. All Fuji Electric Dual-In-Line Small IPMs come equipped with overcurrent protection, short circuit protection, control power voltage drop protection, and overheating protection, while also outputting alarm signals.

“Fuji Electric continues to expand our offering in the dual-in-line small IPM market and the new P642 series is our latest offering expanding our range to 75A,” said James Usack, Division General Manager Electronic Devices Division.

Fuji Electric Corp. of America is a wholly-owned subsidiary of Fuji Electric Co., Ltd., headquartered in Tokyo, Japan, and has been responsible for the sales and distribution of the company’s products since 1970. Fuji Electric Co., Ltd. began developing power electronics equipment in 1923 and is a global leader in industrial products ranging from semiconductors, HMIs, contactors, relays, and power generation equipment to AC drives and uninterruptible power supply systems.

Comparison Between Thyristor and IGBT

 Thyristor and IGBT (Insulated Gate Bipolar Transistor) are two types of semiconductor devices with three terminals and both of them are used to control currents. Both devices have a controlling terminal called ‘gate’ but have different principles of operation. The thyristor is made of four alternating semiconductor layers (in the form of P-N-P-N), therefore, consists of three PN junctions. In the analysis, this is considered as a tightly coupled pair of transistors (one PNP and other in NPN configuration). The outermost P and N-type semiconductor layers are called anode and cathode respectively. The electrode connected to the inner P-type semiconductor layer is known as the ‘gate’. In operation, the thyristor acts conducting when a pulse is provided to the gate. It has three modes of operation known as ‘reverse blocking mode’, ‘forward blocking mode’, and ‘forward conducting mode’. Once the gate is triggered with the pulse, the thyristor goes to the ‘forward conducting mode’ and keeps conducting until the forward current becomes less than the threshold ‘holding current’.

 

Thyristors are power devices and most of the time they are used in applications where high currents and voltages are involved. The most used thyristor application is controlling alternating currents. IGBT is a semiconductor device with three terminals known as ‘Emitter’, ‘Collector’ and ‘Gate’. It is a type of transistor, which can handle a higher amount of power and has a higher switching speed making it highly efficient. IGBT has been introduced to the market in the 1980s. IGBT has the combined features of both MOSFET and bipolar junction transistor (BJT). It is gate driven like MOSFET and has current-voltage characteristics like BJTs. Therefore, it has the advantages of both high current handling capability and ease of control. IGBT modules (consists of a number of devices) handle kilowatts of power.

Advantages of IGBT Compared to MOSFET and BJT

For a power semiconductor device, usually widely used as a switch or rectifier in power supply applications, one of its particularly important requirements relates to the characteristic of breakdown voltage to endure high voltage. As devices in such applications evolve, a great deal of effort has been paid to boast the breakdown voltage. The fruit of such efforts is an IGBT, gradually gaining wider applications for modern devices and appliances due to its various advantages. The IGBT is an element combining the advantages of the MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) structure as well as the advantages of BJT (Bipolar Junction Transistor) structure. Combined with the fast switching characteristic of the MOSFET along with the high-current and low-saturation-voltage capability of the BJT, the IGBT expands its scope of applications such as display, automobile, motor, and household appliances. Breakdown voltage under the high voltage environment is a key characteristic required in the IGBT, which is therefore designed by implementing an edge-termination structure — called edge termination region — in the lateral side of its junction so as to alleviate the electric field in the junction edge.

Siemens to Install State-of-the-Art IGBT Technology for Indian Railways

IGBTs are state-of-the-art power electronics for the traction system of electric and diesel-electric rail vehicles. The main benefit of IGBT is that it reduces the requirement for current, minimizing heat and traction noise while also making the acceleration process efficient. Automation solutions provider Siemens Limited has bagged the contract to install state-of-the-art IGBT technology for Indian Railways. The company will be designing, supplying, and installing alternating current (AC) traction systems for dual cab high horsepower diesel engine locomotive for diesel locomotive works (DLW). "The systems have been developed based on the state-of-the-art insulated gate bipolar transistors (IGBT) technology. The AC traction systems will be produced at its factory at Nashik, Maharashtra, India" the company said.

Hopewind de China Selecciona Los Módulos LoPak de ABB Luego de Dos Años de Pruebas Intensivas

Después de más de dos años de pruebas rigurosas, incluido un año de operaciones de campo, el módulo LoPak IGBT de ABB ahora está calificado para ser utilizado por uno de los principales fabricantes de convertidores de energía eólica del mundo.

La compañía china Hopewind Electric Co., Ltd. de China tiene programada la entrega en volumen de módulos IGBT de potencia media LoPak de 1700 V / 450 A para su uso en aplicaciones de convertidores eólicos que operan entre 1,5 y 2,5 MW (megavatios). Esto sigue a la exitosa colaboración entre Hopewind, Sunking (socio de distribución en China) y el equipo de ABB Power Grids en Lenzburg, Pekín y Manila. La fase de producción actual de Hopewind generará hasta 2.000 MW utilizando energía eólica, una capacidad equivalente a las necesidades de un millón de hogares suizos.

Hopewind se centra en la investigación, fabricación, ventas y servicio de energía renovable y productos de accionamiento eléctrico, con sus productos principales que van desde la generación de energía eólica, la generación fotovoltaica y los productos de accionamiento industrial.