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Showing posts with label Toshiba Semiconductor. Show all posts
Showing posts with label Toshiba Semiconductor. Show all posts

Tuesday, July 25, 2023

Toshiba Semiconductor MG400V2YS60A Power Module

MG400V2YS60A is a power module designed for use in high-power applications, such as motor control, power supplies, and renewable energy systems. It is manufactured by Toshiba Electronic Devices & Storage Corporation, a leading semiconductor company.


The power module features a silicon carbide (SiC) MOSFET (metal-oxide-semiconductor field-effect transistor) chip with a voltage rating of 600V and a current rating of 400A. It also includes a diode with a reverse voltage rating of 600V and a current rating of 400A. The module is designed to operate at high frequencies, up to 20kHz, and is optimized for low switching losses and high efficiency.


The MG400V2YS60A is built using advanced technologies, such as Toshiba's second-generation SiC MOSFET and Schottky barrier diode technologies, which enable high power density and reliable performance. It also features a low-inductance design, which reduces electromagnetic interference and improves switching performance.


The module is designed for easy installation and includes built-in protection features, such as overcurrent and overtemperature protection. It is housed in a compact, easy-to-mount package and is compatible with standard mounting and cooling systems.


Overall, the MG400V2YS60A is a high-performance power module that offers excellent power handling capabilities and reliable performance in demanding applications. The use of SiC MOSFET technology makes it particularly suitable for applications that require high efficiency, high power density, and high switching frequencies.


Sunday, July 23, 2023

Toshiba Semiconductor MG30G6EL2 IGBT Module

MG30G6EL2 is a product code for a high-power insulated gate bipolar transistor (IGBT) module manufactured by Toshiba Semiconductor.


The IGBT is an electronic switch used in power electronics and is capable of handling high voltage and current levels. The MG30G6EL2 module contains two IGBTs and a diode mounted on a single substrate and is designed for use in high-power applications such as motor drives, power supplies, and inverters.


The module operates on a voltage range of 600 volts DC and can handle a continuous current of up to 30 amps. The IGBTs in the module feature a low on-state voltage drop, which reduces power losses and increases efficiency.


The MG30G6EL2 module is designed to be easy to use and integrate into existing systems. It features a compact and rugged design, with a high-temperature performance of up to 150°C, making it suitable for use in harsh industrial environments.


The module also features built-in protections such as over-current and over-temperature protection, which help to ensure safe and reliable operation. Additionally, the module has an isolated base plate for better thermal management.


Overall, the MG30G6EL2 module is a high-performance and reliable solution for high-power applications that require efficient and compact power switching.


Sunday, June 23, 2019

Toshiba MG75N2YS40 IGBT Power Module

MG75N2YS40 is a very high power switching device used to power up your UPS! Made by Toshiba, this advanced power module has a very lightweight and has the complete package that will eliminate most if not all problems of your application!

With a very low saturation and low power consumption, this Toshiba IGBT power module can easily be installed in any kind of panel. No more worries about extreme temperatures! Toshiba MG75N2YS40 can work perfectly both on very high (140ᵒ C) & very low (-40ᵒ C) temperature conditions.

MG75N2YS40 can give an outstanding performance to your UPS as proven by its very efficient reverse recovery time, to help you feel at ease during power interruptions.

MG75N2YS40 is the name of reliability and perfection. Cost doesn’t matter if you have the best in your hand.

Thursday, June 6, 2019

MG200Q2YS50 Toshiba GTR Module

Toshiba MG200Q2YS50 (GTR Module Silicon N Channel IGBT) is the ultimate solution to enhance the performance of your high power switching applications. With a weight of only 0.95 lbs., this remarkable device can generate a power of 200 amperes of collector current and a collector-emitter of 1200 volts!

MG200Q2YS50 is equipped with a complete half bridge, all in one package. Plus, its electrodes are isolated from its case and has low power dissipation, thus enhancing its efficiency rate.

Classified as a Generic Transient Recorder, MG200Q2YS50 can offer full support to various transient recorders. It has also been proven that this device can release the full potentials of DC motor controls.

MG200Q2YS50’s installation is very convenient due to its simple but advanced components. It has a built-in diode and a flange mounting device for easy use. Its amazing reverse recovery time has also been designed to improve its operational speed and reliability.

Monday, March 25, 2019

MG75Q1BS11 Toshiba IGBT Power Module

The MG75Q1BS11 is the High Power IGBT module for you! Delivering speed and power, this Toshiba IGBT module can boost the performance of various applications including UPS, Motor Controls, Air conditioners and the like.

The MG75Q1BS11 is a pro in IGBT technology, and the MG75Q1BS11 is made by the pro. It’s a silicon N Channel IGBT that delivers that performance you ever need! It is High Input Impedance, High-speed switching, and its enhanced-mode sets the Toshiba MG75Q1BS11 apart from all others. Even the MG75Q1BS11’s electrodes are isolated from a case to prevent short-circuits.

Monday, February 11, 2019

MG25J6ES40 Toshiba IGBT Power Module

Introducing the MG25J6ES40, the device with six IGBT chips in one package! It is guaranteed to deliver six times as much of the performance and six times as much as the power compared to a single IGBT. Now, that’s what we call a performance!


The MG25J6ES40 is a high-speed, cost-effective Toshiba IGBT module. With the power of six IGBTs inside its package, it’s no wonder it can deliver that speed and power never seen before. And don’t worry about space and weight. It only takes space as a single IGBT will, and it only weighs at a very light 0.5 pounds.


Reliability, efficiency, and cost-effectiveness – this is what Toshiba MG25J6ES4 guarantees with your chosen application.

Thursday, February 7, 2019

MG75Q2YS50 Toshiba IGBT Power Module

Make your life easier with the Toshiba MG75Q2YS50 IGBT module! This IGBT power module delivers the speed and power required for high power switching and motor controls.

Manufactured by Toshiba, you can be sure that MG75Q2YS50 is an IGBT packed with amazing features. It’s high-speed full-on to full-off switch in only 0.3 microseconds makes it one of the best IGBTs around. Not only that, it’s enhancement-mode feature makes sure that the MG75Q2YS50 Toshiba IGBT module delivers the performance you need. Worried that the speed and power might burn out the components inside? Worry not for its electrodes is isolated from the case, thus ensuring that you have a safe and durable transistor.