MG400G1UL1 Toshiba Power Transistor Module

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MG400G1UL1 is the best power transistor module to amplify the performance of your motor control applications, and eliminate most if not all problems. Manufactured by Toshiba, MG400G1UL1 is classified as an IGBT GTR module that weighs 1.08 lbs. with a collector emitter voltage of 600V and a collector current amount of 400A.

MG400G1UL1 has an exceptional ability to sustain full functionality for a long period of time. It is built-in with free-wheeling diode system, and covered with high quality insulation designed to withstand heat caused by chronic or heavy operations. This Toshiba power module also features a low saturation voltage system.

MG400G1UL1’s ability to boost the performance of motor control applications has been tested and proven by experts for years. Aside from its efficiency to upgrade the applications’ capacity, it is also durable and cost-effective. So, if you’re looking for the best transistor module to boost the performance of your motor control applications, MG400G1UL1 is the best choice.

Toshiba MG20G6EL1 IGBT Power Transistor Module

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Toshiba MG20G6EL1 gives you that performance you’re looking for! Only a few power transistor modules can match the MG20G6EL1’s level. This wonder Toshiba IGBT module is now available for your use!

The MG20G6EL1 features the power of four to six Darlington transistors! MG20G6EL1 has the power of four to six Darlington transistors. That means that its operation is four to six times more efficient, four to six times more power, four to six times its performance! With its High DC current gain, the MG20G6EL1 can be used for heavy work applications such as in welding machines.

MG200Q2YS40 Toshiba IGBT Power Module

Enhance the performance of your high power switching applications with MG200Q2YS40. Order now at http://www.uscomponent.com/buy/toshiba/mg200q2ys40/.

 MG200Q2YS40 is a perfect Toshiba IGBT power module to upgrade the performance of high speed switching motor drives. At only 0.95 lbs., this device can produce a collector emitter voltage of 1200 and a collector current of 200 amperes.

MG200Q2YS40 has outstanding features that give itself the title of one of the most amazing Toshiba IGBT modules today! Its electrodes are isolated from its base, confirming that it’s an advanced type of module. Moreover, it has three terminal power semiconductor devices.

To prevent delayed switching responses, MG200Q2YS40 is designed with an extremely low reverse recovery time. It has a complete half bridge in one package to modify its performance rating.

MG200Q2YS40 also has a robust module construction to ensure its high durability. Even when used on full power for the entire day, rest assured that it’s not damaged at all.

Flexibility wise, Toshiba MG200Q2YS40 can also work best on other applications like robots, servo controls, electric choppers and many more!

MG200Q2YS50 Toshiba GTR Module Silicon N Channel IGBT

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Toshiba MG200Q2YS50 (GTR Module Silicon N Channel IGBT) is the ultimate solution to enhance the performance of your high power switching applications. With a weight of only 0.95 lbs., this remarkable device can generate a power of 200 amperes of collector current and a collector emitter of 1200 volts!

MG200Q2YS50 is equipped with a complete half bridge, all in one package. Plus, its electrodes are isolated from its case and has low power dissipation, thus enhancing its efficiency rate.

Classified as a Generic Transient Recorder, MG200Q2YS50 can offer full support to various transient recorders. It has also been proven that this device can release the full potentials of DC motor controls.

MG200Q2YS50’s installation is very convenient due to its simple but advanced components. It has a built-in diode and a flange mounting device for easy use. Its amazing reverse recovery time has also been designed to improve its operational speed and reliability.

MG75Q1BS11 Toshiba IGBT Module

Better make sure you don’t miss out this amazing deal! The MG75Q1BS11 is avaiable for purchase at http://www.uscomponent.com/buy/toshiba/mg75q1bs11/. What are you waiting for? Visit the site now!

The MG75Q1BS11 is the High Power IGBT module for you! Delivering speed and power, this Toshiba IGBT module can boost the performance of various applications including UPS, Motor Controls, Air conditioners and the like.

The MG75Q1BS11 is a pro in IGBT technology, and the MG75Q1BS11 is made by the pro. It’s a silicon N Channel IGBT that delivers that performance you ever need! Its High Input Impedance, High speed switching, and its enhance-mode sets the Toshiba MG75Q1BS11 apart from all others. Even the MG75Q1BS11’s electrodes are isolated from a case to prevent short-circuits.

MG400Q1US41 Toshiba Power Transistor Module

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MG400Q1US41 is the power module you need to make a performance upgrade of your heavy machineries. This Toshiba power transistor module may have a weight of 103 lbs. But you’ll be surprised as to how far it can boost your machineries’ power!

With a collector current of 400A and a collector emitter voltage of 200V, MG400Q1US41 is equipped with high input impedance, high speed and low saturation voltage to ensure high level of efficiency and reliability to the transistor module.

Classified as an IGBT, MG400Q1US41 truly works best on high power switching applications or those commonly seen in industrial and manufacturing settings. Even with the ability to power up heavy machineries, rest assured that MG400Q1US41 poses no risks of injury to nearby individuals.