The FZ1200R17KE3 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module from Infineon. It features a 1200V rating and is designed for demanding applications such as inverters and motor drives. This module offers high efficiency and reliability, with a low on-state voltage drop and fast switching capabilities. It integrates a sophisticated gate drive circuit, enhancing overall performance and reducing system complexity. Its rugged design ensures durability under harsh operating conditions. The FZ1200R17KE3 is suitable for use in various industrial sectors including renewable energy systems, automotive applications, and high-power converters, providing robust and efficient power control.
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