FZ800R12KE3 is the high-performance insulated gate bipolar transistor IGBT module produced by Infineon Technologies. A leading manufacturer of Power Electronic components. It is designed for use in high-power switching applications such as motor drives, renewable energy systems, and Industrial Automation.
The IGBT module has a current rating of 800A and a voltage rating of 1,200 volts. It consists of two IGBTs in a chopper configuration with each IGBT equipped with a freewheeling diode. The
module also includes a temperature sensor for over-temperature protection and a built-in snubber circuit to reduce switching losses.
The FZ800R12KE3 IGBT module is designed with low resistance and high-speed switching characteristics which result in low power dissipation and high efficiency. it is also designed with a compact and robust package which provides excellent thermal performance and high resistance to Mechanical stress. The module is also equipped with an electrical Interlock system that prevents incorrect module insertion ensuring safe and reliable operation.
Overall, the FZ800R12KE3 IGBT module is a high-performance device that provides efficient and reliable power switching capabilities in high-power applications. It's high current and voltage ratings
combined with its low resistance and high-speed switching characteristics make it suitable for use and demanding Power Electronics applications that require High switching frequencies such as high-frequency inverters and converters
Please visit us at https://www.uscomponent.com/buy/infineon/fz800r12ke3 for more info.
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