CM200DY-28H is an Insulated Gate Bipolar Transistor (IGBT) module produced by Mitsubishi Electric Corporation. It is designed for high-power switching applications and consists of two IGBTs in a half-bridge configuration.
The IGBT module has a current rating of 200A and a voltage rating of 1400V. It also includes a built-in freewheeling diode for each IGBT, which allows for efficient switching and reduced power losses.
The CM200DY-28H IGBT module is designed with low-on resistance and high-speed switching characteristics, making it suitable for use in various power electronics applications, such as motor drives, renewable energy systems, and industrial automation. It is also designed with a compact and robust package, which enables easy installation and provides high reliability in harsh operating environments.
The module is also equipped with a temperature sensor for over-temperature protection and has a low thermal resistance, which helps to improve its heat dissipation performance.
Overall, the CM200DY-28H IGBT module is a high-performance device designed to meet the demanding requirements of modern power electronics applications, providing efficient and reliable power switching capabilities. Its high current and voltage ratings make it suitable for high-power applications that require precise and rapid switching.
No comments:
Post a Comment