FSAM30SH60A is a module that combines a fast recovery diode with a high-speed switching IGBT (Insulated Gate Bipolar Transistor) in a single package. This module is designed for use in power electronics applications, such as motor drives, power supplies, and welding equipment.
The module is manufactured by Fairchild Semiconductor and has the following specifications:
Maximum collector-emitter voltage (Vce): 600V
Maximum collector current (Ic): 30A
Maximum power dissipation (Pd): 330W
Maximum junction temperature (Tj): 150°C
Low forward voltage drop and high-speed switching performance
High surge capability and short-circuit withstand time
Overall, the FSAM30SH60A module provides a robust and efficient solution for high-power switching applications that require fast and reliable operation.