Fuji Electric IGBT Module 2MBI150U4A 120 M

 2MBI150U4A-120-M is a product code for a high-power insulated gate bipolar transistor (IGBT) module manufactured by Fuji Electric. The IGBT is an electronic switch used in power electronics and is capable of handling high voltage and current levels. The 2MBI150U4A-120-M module contains two IGBTs and a diode mounted on a single substrate and is designed for use in high-power applications such as motor drives, power supplies, and inverters.

The module operates on a voltage range of 1200 volts DC and can handle a continuous current of up to 150 amps. The IGBTs in the module feature a low on-state voltage drop, which reduces power losses and increases efficiency.

The 2MBI150U4A-120-M module is designed to be easy to use and integrate into existing systems. It features a compact and rugged design, with a high-temperature performance of up to 150°C, making it suitable for use in harsh industrial environments.

The module also features built-in protections such as over-current and over-temperature protection, which help to ensure safe and reliable operation. Overall, the 2MBI150U4A-120-M module is a high-performance and reliable solution for high-power applications that require efficient and compact power switching.

Semikron IGBT Module SKM400GB123D

SKM400GB123D is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by Semikron.

IGBTs are semiconductor devices used for switching and amplifying electrical power in a wide range of applications, including motor drives, power converters, and renewable energy systems. IGBTs combine the advantages of MOSFETs (Metal Oxide Semiconductor Field-Effect Transistors) and bipolar transistors, allowing for high voltage and current handling capabilities with low power dissipation.

The SKM400GB123D IGBT module features a blocking voltage of 1200V, a current rating of 400A, and a collector-emitter saturation voltage of 2.5V. It has a dual-chip design with a low inductance module construction, making it suitable for high-power applications requiring fast switching and low losses.

The module has a compact and robust package design, with a base plate made of aluminum oxide ceramic for high thermal conductivity and electrical isolation. It also features a press-fit pin technology for easy and reliable mounting onto a heatsink.

Overall, the SKM400GB123D IGBT module is a high-performance and reliable device suitable for demanding applications that require high power density and efficient operation.

High Power Semikron IGBT Module SKM150GB123D

 SKM150GB123D is a high-power Insulated Gate Bipolar Transistor (IGBT) module designed for use in a variety of industrial and power electronic applications. The module features a collector-emitter voltage rating of 1200V and a collector current rating of 150A, making it suitable for use in high voltage and high current applications.

The SKM150GB123D module is housed in a SEMITOP 3 package, which is designed to provide excellent thermal performance and electrical isolation. The package has a low-profile design and a compact footprint, making it easy to integrate into existing electronic systems.

The IGBT module is designed for high switching frequency operation, with a maximum switching frequency of up to 20kHz. This allows it to be used in a range of applications, including motor control, renewable energy systems, and power supplies.

Overall, the SKM150GB123D IGBT module is a reliable and high-performance component that is well-suited for a range of industrial and power electronic applications that require high power and high voltage capabilities.

A Reliable Mitsubishi Electric PM25RSK120 IGBT Module

 PM25RSK120 is a high-power IGBT (Insulated Gate Bipolar Transistor) module produced by Mitsubishi Electric. It is designed for use in high voltage and high current applications such as motor drives, renewable energy systems, and industrial machinery.

The PM25RSK120 module consists of two IGBTs and two diodes connected in a half-bridge configuration. It has a maximum current rating of 50A and a maximum voltage rating of 1200V. The module is equipped with built-in overcurrent and over-temperature protection features to ensure safe and reliable operation.

The PM25RSK120 module has a low thermal resistance design, allowing for efficient heat dissipation and ensuring long-term stability and reliability. It is also compact and lightweight, making it ideal for applications where space is limited.

The PM25RSK120 module is a reliable and high-performance solution for high-power applications that require efficient power switching and precise control.

TDK-Lambda Corporation PAH150S48-24V DC DC Converter

PAH150S48-24V is a part number for a DC-DC converter module manufactured by TDK-Lambda Corporation, a company that specializes in power supplies and converters for various industries.

The PAH150S48-24V DC-DC converter module has a nominal input voltage of 48V and a nominal output voltage of 24V. It is designed to provide high efficiency and reliable performance in a range of applications, including telecommunications, data storage, and industrial automation.

The converter module is based on a high-frequency, full-bridge topology that provides efficient and reliable power conversion. It has a maximum output power of 150W and can operate over a wide temperature range, making it suitable for use in harsh environments.

The PAH150S48-24V DC-DC converter module features a compact and lightweight design that makes it easy to integrate into existing electronic systems. It has a low profile package and a high power density, which helps to minimize the footprint of the system.

Overall, the PAH150S48-24V DC-DC converter module is a high-quality component that provides efficient and reliable power conversion in a range of applications. Its high efficiency, wide temperature range, and compact package design make it a popular choice among designers and engineers in the electronics industry.

Infineon IGBT Module FZ1200R33HE3 for High Power Applications

 FZ1200R33HE3 is a part number for a high-power insulated gate bipolar transistor (IGBT) module manufactured by Infineon Technologies, a company that specializes in semiconductor solutions for a wide range of applications.

The FZ1200R33HE3 IGBT module is designed to handle high voltage and high current applications, such as industrial motor drives, power supplies, and renewable energy systems. It has a collector-emitter voltage rating of 1200V and a collector current rating of 1200A, making it suitable for high-power applications.

The IGBT module features a half-bridge configuration, which includes two IGBTs and two diodes. This configuration is designed to provide efficient and reliable switching performance, with a maximum switching frequency of up to 8 kHz.

The FZ1200R33HE3 IGBT module is housed in a high-performance package that provides excellent thermal management and electrical isolation. The package has a low-profile design and a compact footprint, making it easy to integrate into existing electronic systems.

Overall, the FZ1200R33HE3 IGBT module is a high-quality component that provides reliable and efficient performance in high-power applications. Its high voltage and high current capabilities, as well as its advanced package design, make it a popular choice among designers and engineers in the power electronics industry.

Infineon Technologies IGBT Module FZ1200R12HE4

 FZ1200R12HE4 is an Insulated Gate Bipolar Transistor (IGBT) module manufactured by Infineon Technologies.

IGBTs are semiconductor devices used for switching and amplifying electrical power in a wide range of applications, including motor drives, power converters, and renewable energy systems. IGBTs combine the advantages of MOSFETs (Metal Oxide Semiconductor Field-Effect Transistors) and bipolar transistors, allowing for high voltage and current handling capabilities with low power dissipation.

The FZ1200R12HE4 IGBT module features a blocking voltage of 1200V, a current rating of 1200A, and a collector-emitter saturation voltage of 2.2V. It has a dual-chip design with a low inductance module construction, making it suitable for high-power applications requiring fast switching and low losses.

The module has a compact and robust package design, with a base plate made of aluminum oxide ceramic for high thermal conductivity and electrical isolation. It also features a press-fit pin technology for easy and reliable mounting onto a heatsink.

Overall, the FZ1200R12HE4 IGBT module is a high-performance and reliable device suitable for demanding applications that require high power density and efficient operation. Its high current rating and low saturation voltage make it suitable for applications that require high switching frequency and high efficiencies, such as inverter systems for renewable energy sources or motor drives in electric vehicles.