The insulated-gate bipolar
transistor (IGBT) is a functional integration of Power MOSFET and BJT
devices in monolithic form. It combines the best attributes of both to achieve
optimal device characteristics. The IGBT is a
three-terminal power semiconductor device primarily used as an electronic
switch that can essentially combine high efficiency with fast switching much
like the MOSFET.
History of IGBT
First-Generation of IGBTs was
on 1980s to early 1990s were prone to failure through such modes as
-latch-up (in which the
device will not turn off as long as current is flowing)
-and secondary breakdown (in
which a localized hotspot in the device goes into thermal runaway and burns the
device out at high currents).
Second-generation devices
were ameliorated, and the current third-generation ones are even more refined,
with speed rivaling MOSFETs, and excellent ruggedness and tolerance of
overloads.
Comparison with MOSFET
An IGBT features a
significantly lower forward voltage drop compared to a conventional MOSFET in
higher blocking voltage rated devices.
IGBTs are favored by high
voltage, high current and low switching frequencies while MOSFETs are better
for handling low voltage, low current and high switching frequencies
The IGBT is a semiconductor
device with four alternating layers (P-N-P-N) that are controlled by a
metal-oxide-semiconductor (MOS) gate structure without regenerative action. The
additional P-N junction blocks reverse current flow. This means that unlike a
MOSFET, IGBTs cannot conduct in the reverse direction. In bridge circuits,
where reverse current flow is needed, an additional diode is placed in parallel
with the IGBT to conduct current in the opposite direction. The penalty isn't
overly severe because at higher voltages, where IGBT usage dominates, discrete
diodes are of significantly higher performance than the body diode of a MOSFET.
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In conclusion, IGBTs have
been utilized for many years and have been produced by various manufacturing
giants for the reason that they integrate the advantages of both
Power MOSFET and BJT to achieve optimal device characteristics. IGBTs continue
to prove their usefulness and feasibility in today’s modern society with its
diverse purposes and functionalities.
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