Hi-Rel 1.2kV SiC Module Announced by Wolfspeed

 Wolfspeed has expanded the use of silicon carbide technology for outdoor systems in transportation and renewable energy applications with the introduction of a new high-reliability 1.2kV SiC power module. Announced at PCIM 2017, this industry-first module successfully passes stringent environmental qualification tests for simultaneous high humidity, high temperature, and high voltage operation.

This new reliability benchmark enables system designers to confidently deploy SiC power modules in outdoor applications such as transportation, wind energy, solar power, and other renewable energy systems. These environments have traditionally posed challenges for safe and stable device operation due to extreme conditions. Passing these tests demonstrates the robustness and maturity of silicon carbide technology for demanding real-world applications.

The all-SiC power module is rated at 300A with a blocking voltage of 1.2kV. It was tested under severe environmental conditions, including 85 percent relative humidity and an ambient temperature of 85 degrees Celsius, while biased at 80 percent of its rated voltage, equivalent to 960V. Successful operation under these conditions provides strong confidence in the long-term reliability and durability of SiC power devices.

Performance under biased stress testing further validates the overall robustness of silicon carbide technology across a wide range of applications. This achievement highlights the suitability of SiC power modules for next-generation power conversion systems that must operate efficiently and reliably in harsh environments.

According to Alstom, silicon carbide components enable the design of compact, lightweight, and low-loss power converters required for railway transportation applications. Achieving the benchmark for high temperature and high humidity operation under high bias voltage represents a critical milestone in the adoption of SiC devices for demanding transportation markets.

The module is powered by new Wolfspeed silicon carbide MOSFETs, part number CPM2-1200-0025A, along with Gen5 Schottky diodes. Both components have passed the same harsh environmental qualification tests at the die level. The module delivers a low on-resistance of just 4.2 milliohms and achieves more than five times lower switching losses compared to similarly rated, latest-generation IGBT modules.

Advanced module construction techniques are employed, including high thermal conductivity aluminum nitride substrates and optimized assembly methods. These design features ensure compliance with industry requirements for thermal cycling and power cycling while supporting high efficiency and high power density operation.

Wolfspeed stated that this 1200V SiC module reflects its commitment to enabling future power electronics markets by meeting anticipated system requirements for 2020 and beyond. The module is available under part number WAS300M12BM2 and can be driven using existing Wolfspeed gate drivers designed for 62mm power modules.

IGBT Modules Segmentation and Market Growth Factors

The global power electronics market is currently undergoing an inevitable modernization. This transformation includes IGBT modules, which are increasingly replacing outdated and legacy equipment. Driven by rapid technological advancement and the simplicity and efficiency of IGBT technology, these devices are becoming a preferred solution in modern power systems. This article discusses the growth drivers and market segmentation of IGBT modules and thyristors.

Due to continuous technological development and the introduction of smart grids in the energy sector, the global market for IGBTs and thyristors is expected to grow significantly in the near future. Population growth and the rising demand for large scale and reliable energy sources are also expected to accelerate market expansion.

IGBTs and thyristors are widely used as power supplies, controllers, and inverters in power electronics applications to meet the increasing demand for solid state switching devices. The growing number of households, along with expanding industrial and energy infrastructure, is expected to further drive market demand in the coming years.

Both IGBTs and thyristors offer several advantages, including reduced switching times and minimal switching losses. These characteristics make them well suited to support future electricity demand while improving overall energy efficiency in modern power systems.

The global IGBT and thyristor market can be segmented based on application areas such as Flexible AC Transmission Systems FACTS and High Voltage Direct Current HVDC systems. Among these, FACTS applications currently hold a leading position due to their role in congestion management, voltage stabilization, frequency stabilization, power flow control, and overall grid stability.

Other application areas include electric and hybrid vehicles EV and HEV, renewable energy systems, liquid level regulation, transportation systems, lighting control, pressure control, motor drives, and various industrial automation applications. This wide range of use cases highlights the growing importance of IGBT modules in energy infrastructure and industrial control.

Power Management Applications Get Latest 1700V and 2500V XPT™ IGBTs Launched by IXYS

IXYS Corporation a leading manufacturer of power semiconductors and integrated circuits for power management energy efficiency and motor control applications has announced the launch of its latest 1700V and 2500V XPT™ IGBTs. These high voltage IGBTs are designed for advanced power management applications that demand high efficiency fast switching and reliable high power performance.

The newly released XPT™ IGBTs offer collector current ratings ranging from 26A to 178A. This wide range makes them ideal for high voltage power management high speed power conversion and industrial power electronics applications. Selected devices are also available with co packed anti parallel fast recovery diodes enabling compact and efficient IGBT power module designs.

IXYS Corporation has a long standing reputation for delivering advanced IGBT technology and innovative power semiconductor solutions. The company was among the pioneers in developing high voltage IGBTs for power management systems particularly in transportation medical equipment and manufacturing applications where efficiency and reliability are critical.

The new 1700V and 2500V XPT™ IGBTs are designed using the patented IXYS Extreme Light Punch Through XPT™ technology combined with advanced IGBT fabrication processes. This results in reduced thermal resistance minimal tail current low switching losses low conduction losses and fast switching performance all of which contribute to higher system efficiency and improved thermal management.

A key advantage of these high voltage XPT™ IGBTs is the positive temperature coefficient of the on state voltage. This feature allows safe parallel operation of IGBT devices. As a result system designers can implement cost effective high power solutions compared to series connected lower voltage IGBTs while reducing gate drive circuitry simplifying system design and improving overall reliability.

The optional co packed fast recovery diodes are optimized for low reverse recovery time and smooth switching waveforms. These characteristics significantly reduce electromagnetic interference EMI making the devices suitable for high frequency and high voltage switching applications.

A wide range of high voltage and high speed power management applications can benefit from these new XPT™ IGBTs. Typical uses include high voltage converters and inverters power pulse circuits laser and X ray generators high voltage power supplies high voltage test equipment capacitor discharge circuits medical switching systems high voltage circuit protection and high voltage AC switches.

The XPT™ IGBTs are available in several international standard power semiconductor packages including SOT 227 TO 247 PLUS247 ISOPLUS i5 Pak™ TO 247HV TO 247PLUS HV and TO 268HV. The latter three packages feature increased creepage distances between leads providing enhanced insulation and robustness against high voltage stress.

Example part numbers from the new XPT™ IGBT family include IXYH24N170C IXYN30N170CV1 IXYH30N170C and IXYH25N250CHV. These devices offer collector current ratings of 58A 88A 108A and 95A respectively and provide flexible reliable solutions for modern high voltage power management and industrial power electronics systems.

Basic and Physical Differences Between IGBT and MOSFET

After evolving side by side over the last three decades, Insulated Gate Bipolar Transistors (IGBTs) and Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) now dominate the power semiconductor market. They are widely used in applications such as motor drives, uninterruptible power supplies (UPS), and solar inverters. A common design question is therefore where IGBTs provide the best fit and when it makes more sense to choose a MOSFET.

The IGBT is a power semiconductor device that combines the output characteristics of a bipolar junction transistor with the gate drive characteristics of a MOSFET. As a result, the IGBT is a minority carrier device with high input impedance and high current carrying capability. This allows it to handle high power levels efficiently while maintaining relatively simple gate drive requirements.

MOSFETs, on the other hand, are majority carrier devices. They offer very fast switching speeds and low switching losses, especially in low to medium voltage applications. However, as voltage ratings increase, the on state resistance of a MOSFET rises significantly. This increase limits efficiency and current handling capability at higher voltages.

Compared to MOSFETs, IGBTs are better suited for applications that require high current operation at higher voltage levels. Their bipolar conduction mechanism enables lower conduction losses at high voltages, making them more scalable for medium and high voltage power applications. This characteristic makes IGBTs a preferred choice in industrial motor drives, traction systems, renewable energy inverters, and high power UPS systems.

From a physical structure perspective, an IGBT integrates a MOSFET input stage with a bipolar output stage. This hybrid structure allows voltage controlled gate operation combined with high current density conduction. MOSFETs rely entirely on the electric field effect and therefore require larger die areas to support high current at elevated voltage levels.

In practical design terms, MOSFETs are generally preferred for low voltage applications, typically below 600V, where high switching frequency and efficiency are critical. IGBTs are typically chosen for applications above this voltage range, where high power density, robustness, and current capability are more important than extremely fast switching speed.

IGBTs for Fast Switching High Current and High Voltage

 Before the development of Insulated Gate Bipolar Transistors power electronics engineers relied mainly on two types of devices for fast and high frequency switching namely the Bipolar Junction Transistor and the Metal Oxide Semiconductor Field Effect Transistor. Both BJTs and MOSFETs were capable of switching at higher frequencies compared to thyristors or SCRs. However each technology had its own limitations.

MOSFETs offered very high switching speeds which made them suitable for high frequency operation. However designs intended for high voltage and high current applications were relatively costly and less efficient. BJTs on the other hand were available in high voltage and high current configurations but generally suffered from lower switching speeds compared to MOSFETs.

Insulated Gate Bipolar Transistors or IGBTs were developed to combine the strengths of both technologies. An IGBT can be considered as an insulated gate N channel MOSFET coupled with a PNP Bipolar Junction Transistor. This structure allows the IGBT to deliver high voltage and high current capability similar to a BJT while retaining the voltage controlled gate characteristics of a MOSFET. This combination enables efficient operation at higher switching frequencies.

An IGBT is a three terminal switching device consisting of the Emitter the Gate and the Collector. Current conduction occurs between the Collector and the Emitter. Similar to a thyristor the IGBT allows controlled current flow when a signal is applied to the Gate. However unlike a thyristor which is current controlled and latches on once triggered the IGBT is voltage controlled. It conducts when a positive voltage is applied to the Gate and switches off only when the Gate voltage is reduced to zero or driven negative.

The output current and voltage characteristics of an IGBT are similar to those of a BJT. However the voltage controlled gate inherited from the MOSFET simplifies the drive circuitry and improves switching performance. One major advantage of the IGBT over a conventional MOSFET is its lower on state voltage. The conduction channel resistance in an IGBT is significantly lower which allows much higher current ratings compared to a similarly rated power MOSFET.

IGBTs are therefore an excellent choice for switching high currents and high voltages in power electronics systems. They are typically used in power applications above 1kW where standard MOSFETs and BJTs begin to reach their practical limits. IGBTs commonly operate at switching frequencies ranging from 1kHz to 20kHz.

Low voltage applications below 600V are usually high volume and consumer oriented. Examples include motor drive control in household appliances such as washing machines. Higher voltage applications are more common in industrial and transportation sectors. Typical operating voltages include 1200V and 1700V which are standard ratings for many industrial IGBT devices.

Key application areas for IGBTs include electric vehicles rail traction systems industrial motor drives renewable energy systems and power conversion equipment. In many of these applications IGBTs are not used as single discrete devices. Instead they are assembled into IGBT modules which integrate multiple devices to form complete power control circuits. This modular approach improves power density simplifies system design and enhances overall reliability.

IXYS UK Westcode Introduce Its Greatest Ever Current Rating IGBT

IXYS UK Westcode have today introduced the highest true current rating press pack IGBT available. This new device sets a benchmark in individual power handling capability. The latest symmetric blocking press pack IGBT features a continuous DC voltage rating of 2.8Kv. It also delivers an unprecedented DC current rating of 6000A. This makes it the most powerful press pack IGBT currently available in the power electronics market.

This achievement is the result of IXYS UK Westcode’s extensive expertise in the design and manufacture of very large press pack IGBTs. The company has long specialized in devices using multiple parallel die technology. The newly developed 4.5Kv press pack devices incorporate proven SPT plus die technology. These devices are built using 52 parallel connected IGBT dies. This is ten more dies than the previously largest established device rated at 2400A at the same 4.5Kv blocking voltage.

Each individual IGBT die measures 14.3mm square. Every die has an active area of nearly one square centimetre. This significantly increases current handling capability and overall power density. The new device is encapsulated in a fully hermetically sealed press pack package measuring 26mm thick. It features a 132mm electrode diameter. Although larger than the traditional 2400A device it maintains the same 170mm overall diameter as the earlier 42 die design. This results in an effective 25 percent increase in current rating within the same package footprint.

The internal structure utilizes a completely bond free design. Each die is directly pressure contacted through metallic pressure plates to external copper electrodes. This construction ensures maximum reliability. It also delivers exceptional thermal cycling performance. These characteristics far exceed those of conventional plastic packaged IGBT modules.

The predictable short circuit failure mode makes these press pack IGBTs particularly suitable for applications requiring series operation. This includes utilities HVDC transmission systems and very large medium voltage drives. The extremely high current rating further reduces the number of parallel current paths required in multi megawatt power applications. This simplifies system design while improving efficiency and reliability.

These devices are especially well suited for harsh environments. They perform reliably in applications where maintenance access is limited. Typical examples include offshore marine wind energy mining and oil and gas installations. The hermetic structure and high rupture resistance are critical advantages in environments where explosive failure or plasma leakage is unacceptable.

The package design is based on IXYS UK Westcode’s proven press pack technology. It offers enhanced rupture capability. The device can withstand more than ten times the short circuit energy of a conventional plastic packaged module. An additional advantage is that the device is virtually guaranteed to fail into a stable short circuit. This makes it ideal for applications where predictable failure high reliability and maximum power density are essential.

To support the application of this new high current press pack IGBT IXYS UK Westcode has also introduced a new complementary diode. This diode belongs to the HP Sonic fast recovery diode range. It is constructed using advanced die bonding technology. This approach maximizes reliability and performance in high power applications.

The HP Sonic fast recovery diode is packaged in an 85mm electrode press pack design. It has a thickness of 26mm. The diode is pressure compatible with the press pack IGBT. This allows both devices to be mounted within the same series string. Such compatibility enables compact three level inverter configurations.

The press pack IGBT is designated by part number T2960BB45E. The compatible HP Sonic fast recovery diode carries part number E3000TC45E. Typical applications include utilities and HVDC systems such as flexible AC transmission systems HVDC transmission STATCOMs and VSC SVC. Other applications include medium voltage AC drives for ultra high power and harsh environments such as mining marine and offshore oil and gas installations. The devices are also well suited for renewable energy systems including wind hydro wave and solar power. They are ideal for any application requiring high power density high reliability and predictable failure behavior.

SanRex PD160F80 IGBT Module 800V 160A for Industrial Motor Drives Inverters and Power Conversion

If you are looking to purchase the PD160F80 thyristor module, visit https://www.uscomponent.com/buy/SanRex/PD160F80 to secure genuine components from USComponent, the official distributor of SanRex products. Buying from an authorized distributor ensures authentic factory‑verified modules with proper traceability, compliant handling, and dedicated technical support, which are essential for industrial power electronics where performance and reliability are critical.

The SanRex PD160F80 is a high‑power thyristor (SCR) power module rated for 800 V and 160 A average on‑state current. It is designed to provide dependable, controlled switching and robust performance in heavy‑duty electrical systems. Thyristors, also known as silicon controlled rectifiers or SCRs, are widely used for phase control and rectification applications, making this module ideal for industrial power conversion tasks where controlled conduction is required.

Thyristor modules like the PD160F80 are perfect for systems involving controlled AC to DC conversion, phase control circuits, and regulated power delivery under significant load. The SCR elements within this module enable precise regulation of conduction angle, which is critical for applications such as AC motor speed control, static power switches, welding power supplies, and phase‑controlled rectifiers. This ensures consistent power delivery even in demanding environments with fluctuating electrical loads.

Built for resilience, the PD160F80 delivers strong surge current tolerance and effective thermal management, enabling sustained operation under continuous load conditions. Effective heat dissipation and rugged packaging help protect internal elements and ensure stable performance over long service life, reducing the risk of thermal stress in industrial environments.

Sourcing high‑power semiconductor modules from unauthorized channels can introduce risks such as counterfeit parts or uncertain storage conditions, which may compromise system performance and safety. By choosing an authorized distributor like USComponent, customers receive verified inventory that meets strict manufacturer specifications. Verified supply, competitive pricing, reliable logistics, and responsive support help ensure secure and predictable procurement for critical industrial projects.

For electrical engineers, system integrators, and procurement specialists seeking a reliable 800 V 160 A thyristor power module for phase control, rectification, or regulated power conversion applications, the SanRex PD160F80 offers proven industry‑grade performance. Its robust design, controlled conduction characteristics, and trusted manufacturer backing make it a solid choice for high‑power industrial applications where control and reliability are paramount.