A $240m IGBT (Insulated Gate BipolarTransistor) manufacture plant has been commenced by Zhuzhou CSR Times Electric
Co, a semiconductor maker from China. The company has done this by comprising
technology enhanced by Dynex Semiconductor, its supplementary in the United
Kingdom. This plant is mentioned to be the first of its category in China and
the second all over the world.
Using eight-inch silicon wafers, high
performance IGBT modules and chips will be produced in this new factory which
is located in Zhuzhou. Output is supposed to touch 120,000 wafers and 1 million
IGBT modules every year in the first stage of the operation CSR’s recently
formed semiconductor business is managing the latest IGBT range. Its European
subsidiary is Dynex.
The multinational CSR Zhuzhou Research &
Development Centre is located at Dynex’s site in Lincoln, United Kingdom. The
centre was set up in 2010 to focus on cutting-edge power semiconductor
technology and, particularly, on the succeeding generation of IGBT products.
The technology is being used to make new IGBTs in the new facility has been
developed in this R&D centre.
Over two years were needed by the latest
production line to be built. Technical advice, support, staff training were provided
by Dynex throughout this process, both in China and in Lincoln.
IGBTs are a crucial part in high-efficacy
electrical power transformation systems used in variable-speed motor drives,
uninterruptable power supplies, power grids, trains, renewable power plants and
electric and hybrid electric vehicles. Using the latest soft-punch-through
field-stop and trench technologies, high-power modules will be manufactured
initially by the new range.
Dr Paul Taylor, president and CEO of Dynex
says, “Since the acquisition of Dynex by CSR Times Electric in 2008, there has
been a rapid development in our IGBT capability.”
“Since the acquisition of Dynex by CSR Times
Electric in 2008, there has been a rapid development in our IGBT capability,”
says Dr Paul Taylor, president and CEO of Dynex. “We began with four–inch
wafers, then upgraded to six-inch at our plant in Lincoln. We then extended our
technology to support the design of this new facility. It complements our base
in the UK by giving us access to a world-leading eight-inch IGBT wafer
fabrication facility and a high-volume module assembly line.
“Our rapid development does not stop there,” he
adds. “The new line has been kitted out with the latest equipment, and the next
phase of expansion is already being planned. This targets key markets such as
electric automotive and renewable energy. So at our UK R&D Centre, we are
already working on designing the next generation of advanced silicon and
silicon carbide power devices, and are busy recruiting new staff to expand our
multinational research, design and development teams to meet this exciting new
challenge.”
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