Power up your solar converters beyond their
limits! The ultimate solution: Eupec Infineon FZ600R12KS4, the super high power
IGBT transistor modules that you can count on for a lifetime.
This Infineon IGBT gate driver module has
incomparable features that make countless buyers of solar converters choose it
over ordinary transistor modules.
Certified by the UL and CSA, it is unlike any typical module and can
operate and withstand extreme temperature.
FZ600R12KS4 has a modified switching attribute such as decreased switching
losses. It allows soft recovery and has
previous packages that provide greater current capabilities. RoHS compliance guarantees the product’s
safety and security.
With its incredible features, FZ600R12KS4 is
the perfect IGBT transistor module that is also compatible to other
applications such as CAVs, UPS, Induction heating and a lot more!
Visit USComponent.com today to experience
the power of Infineon IGBT FZ600R12KS4.
Nuclear, coal and petroleum are the world’s
greatest sources of energy, powering our everyday lives. Each day, more and more energy is consumed,
hence, depleting our sources – sources that cannot be replaced, sources that
form a huge part of our global problems.
As we divert to alternative sources of energy,
companies supplying them face challenges in maintaining optimum performance.
And it is through this idea that FZ800R12KL4C is born.
FZ800R12KL4C, a first class IGBT transistor
module, changes the game in wind energy systems. Powering up wind turbines
beyond limits, your community is guaranteed to have enough wind energy that
will last for an extended period of time. Able to withstand harsh climates,
FZ800R12KL4C assures that your wind turbines remain at their excellent
performance. Finally, it’s equipped with the Emitter-Controlled Diode that
reduces the IGBT’s turn-on losses and provides soft recovery.
Get FZ800R12KL4C now at USComponent.com and
let your community experience an extraordinary kind of wind power.
FZ400R12KS4 is a perfect IGBT transistor
module for your commercial, agriculture and construction vehicles or CAVs. With
a light weight of 2.2 lbs, FZ400R12KS4 is designed for high frequency
switching, making it the perfect IGBT transistor module for CAVs.
FZ400R12KS4 also features
high short circuit capability, self-limiting short circuit current, low
switching losses, and high creepage and clearance distances. With its
unparalleled robustness, your CAVs would have power beyond the limits!
Since FZ400R12KS4 guarantees optimal
performance, flexibility and reliability, this IGBT transistor module is not
only suitable for CAVs. It is also proven to be beneficial to other target
applications such as:
Solar and wind converters,
Induction heating, and
Welding.
Your CAV deserves the best IGBT transistor
module! Order yours today at USComponent.com and experience the ease and
comfort that FZ400R12KS4 can provide for you!
http://www.USComponent.com/IGBT-Manufacturer/eupec-infineon/
is one of the fastest growing distributors of electronic components worldwide.
We provide fast delivery and tech support for power electronics. One of our
manufacturers is Infineon Technologies AG.
Infineon Technologies AG is a German semiconductor manufacturer
founded on 1 April 1999, when the semiconductor operations of the parent
company Siemens AG were spun off to form a separate legal entity.
Infineon develops innovative IGBT solutions for individual systems
and applications. Being a brand leader in IGBT manufacturing, Infineon offers a
comprehensive portfolio containing different voltage and current classes. IGBT
products are offered as bare dies, discrete components, power modules, and
complete stack solutions.
IGBT bare dies are silicon based IGBT chips. Infineon supports
bare die and wafer solutions for module manufacturers enabling higher levels of
integration, power density and board space reduction. Infineon also offers IGBT
chips assembled in discrete plastic packages, called Discrete IGBTs, which are
available as Single IGBTs and co-packed with freewheeling Diode. These devices
are suitable for application such as General Purpose Inverters, Solar
Inverters, UPS, Induction Heating, Major Home Appliances, Welding, and SMPS.
Benefits of Discrete IGBTs are high current density and low power dissipation
resulting in higher efficiency and smaller heat sink to allow lower overall
system cost.
Larger arrangements that form basic building blocks of power
electronic equipment are considered Power Modules usually combining IGBT and
diode dies in various topologies. Ready to use assembled stacks are configured
to cope with the needs of IGBT power modules or discs, depending on the field
of applications From all-in-one power integrated modules with rectifier, brake
chopper and inverter part to highest power stack assemblies, Infineon products
cover a range from only hundreds of watts to several megawatts. General purpose
drives, servo-units and renewable energy applications like solar inverters or
wind applications benefit from the outstanding performance, efficiency and
longevity of these highly reliable products.
The HybridPACK family as a special product series with automotive qualification
is available to support the designer's efforts in electric mobility. With the
HybridPACK family Infineon has developed new power semiconductor modules, which
have been specifically designed for hybrid electric vehicle applications.
Variations in the requirements for mild and full hybrid applications have been
taken into account for each design. For evaluation purposes Infineon is
offering a complete Hybrid-Kit solution consisting of a HybridPACK 1 or
HybridPACK 2 module, driver board, logic board and a special designed power
capacitor from EPCOS.
The automotive Easy 1B and Easy 2B Modules provide a platform for
flexible topologies for applications with a power range of up to 6kW. The
automotive Easy Module Series is based on the well-established industrial Easy
Module version. The availability of a high voltage battery system in both HEVs
and EVs offers the possibility to increase the efficiency and to reduce the
cost of some applications that are today supplied by the low voltage board-net
(14V) in IC engine vehicles.
Infineon further supports the automotive industry, providing a
variety of discrete IGBT power semiconductors qualified according to AECQ101.
To make setting up a laboratory experiment or a first prototype
easier, Infineon helps by providing evaluation boards for most of the products
to accelerate development cycles. Thus, conclusive results can be generated
within the shortest possible time.
USComponent had
been selling IGBT power transistor modules since 2001. Infineon, Thyssen Krupp,
OTIS, IXYS, SONY DADC, General Motors, Hongkong Electric Holdings Limited,
Singapore Mass Rapid Transit Trains LTD, Verkehrsbetriebe Zurich, Czech
Airlines, Molex, Cisco, Omron, Good Year Tires, Thai Airasia, Boeing, Xilinx,
LEAR SIEGLER, and General Electric.
FF800R17KF6C_B2,
a 1700V IHM 130mm Dual IGBT Module with IGBT2 Low Loss, enlarged diode and
AlSiC base-plate. It’s the best solution for your renewable energy and industry
applications. The module is manufactured by Infineon Technologies AG formerly
Eupec, a renowned semiconductor manufacturer from Germany. Infineon provides
semiconductor and system solutions, focusing on three central needs of our
modern society: Energy Efficiency, Mobility and Security. FF800R17KF6C_B2 is
highly reliable and features robust module construction. It has enlarged diode
for regenerative operation.
Power
semiconductors have a major role to generate energy from renewable sources. In
wind turbines, power semiconductors are utilized to transform power and to
combine the generator with the grid. They are also made into different
subsidiary drives such as pitch drives, yaw drives, pumps and into protection
circuits like crowbars. A number of vital functions and applications are
controlled by wind power converters and that’s why highest quality power semiconductors
are required. This is applicable in specific to offshore wind converters which
operate in immensely tough conditions exposed to salt, humidity etc. Speedy
growth is planned for the offshore portion. FF800R17KF6C_B2 is a perfect choice
in these fields.
Wind energy
turbines must also be intended to deliver maximum levels of availability in
order to contribute to grid stability. This applies not only to the converter,
but also to the different subsidiary drives mounted in different positions. Grid
stability therefore depends on power semiconductor assemblies offering dynamic
capabilities, outstanding functionality and superior reliability.
Advantages
like high power density for compact inverter designs & standardized housing
can be found if we use FF800R17KF6C_B2 in wind power applications.
There has
been flourishing global advancement in wind power generation. The sum of power
produced using wind-power has raised from 7.5 Giga-Watts in 1997 to 74
Giga-Watts in 2006 with further increment happening at the rate of a doubling
of generation every three to four years. It is calculated that 12 percent of
the world’s electricity requirements will be supplied by wind-power in 2020.
The prominent wind power generators in the world are Germany and Spain,
succeeded by the United States. China is also invasively imitating wind-power
generation. China blueprints to spend $ 700 Billion until 2020 in renewable
energy projects. Huadian Power International Corporation, a China based company
has obtained authorization to build two wind power projects with an associated
capability of 147 Mega-Watts. Moreover, an Indian company, Suzlon Energy, has
become the world’s eighth largest generator of wind turbine generators.
Companies have also fixed on wind-power as a significant growth segment in the
future.
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http://www.USComponent.com. We have been
selling IGBT power transistor modules for the last fourteen years from
different companies including Infineon and FZ1200R12KL4C is one of our best sellers. We sell original &
new parts only. You can trust us in terms of quality because we always try to
supply the authentic parts. All of our parts are backed up with 30 days
warranty. Please take a look at our website for stock check or technical
support or call us at +1 (281)899-0483.
Today we will
know about FZ1200R12KL4C, a 1200A/1200V IHM 130mm single switch IGBT power
transistor module with IGBT2 low loss and Emitter Controlled Diode. The weight
of this device is 8.82 lbs. It is the perfect choice for your industry
applications. Motor Control and Drives, Solar Energy Systems, Wind Energy
Systems, Uninterruptable Power Supplies, etc. are the applications it excels
at. It is manufactured by famous German manufacturer Infineon Technologies who
are specialist in making semiconductors and system solutions by targeting the
primary needs of our modern society. Infineon was known as Eupec previously in
the world of technology.
High
reliableness and solid module construction are the features for which
FZ1200R12KL4C is exceptional. This module is recognized by UL too. We will be
eligible to get some extra advantages if we use this transistor in our industry
applications. High power density can be achieved for compact inverter designs
by using this. Standardized housing is another attribute which makes
FZ1200R12KL4C unique.
We are going to
have a discussion about the implementation of FZ1200R12KL4C in solar inverters.
Solar power has
a large potential to provide the electricity needs of the world’s burgeoning
population. However, in 2008 solar-power supplied less than 0.02% of the
world's total energy supply.
A solar inverter converts variable direct current (DC) output of a
photovoltaic (PV) solar array panel to AC voltage. The energy produced from
solar panels is used to power household appliances directly, charge batteries
or feed electricity directly back to the grid in return for credit against
future power bills. All of these applications need AC voltage. The DC voltage
produced by the solar array must be converted into a desired well regulated AC
power by using an IGBT based inverter. FZ1200R12KL4C provides advantages in
solar inverter applications compared to other types of power devices. It
delivers low conduction and switching losses resulting in high inverter
efficiency. Benefits like high-current-carrying capability, gate control using
voltage instead of current and the ability to match the co-pack diode are found
when FZ1200R12KL4C is used as the power device in solar inverters.
FZ1200R12KL4C has some major advantages over
MOSFETs and bipolar transistors. First, it has very low on-state voltage drops
because of the conductivity modulation, in addition to superior on-state
current density. These factors allow manufacturers to fabricate devices with
smaller chip size and at lower cost. Second, these boast low driving power and
simple driving circuits due to the input MOS gate structure. It is simpler to
control compared to current controlled devices such as bipolar transistors.
Third, FZ1200R12KL4C has
fantastic forward and reverse blocking capabilities. These characteristics
encourage designers to select this IGBT module for solar inverter applications.
Fuji has come
a long way to become the giant electrical company it is today. Fuji, a spinoff
company from Siemens, manufactures a multitude of electrical equipment and
amongst it all are IGBTs. The IGBT is a high performance 6th generation
IGBT/FWD chipset with a compact design that provides for greater power output.
It has environmentally friendly modules with easy assemblage, solder-free
options, and RoHS compliance. The IGBT turn-on switching characteristics
include: improved noise-loss trade-off, reduced turn-on dv/dt, and excellent
turn-on dic/dt. Turn-off switching characteristics include: soft switching
behavior and turn-off oscillation free.
In 2006 Fuji
Electric achieved world-leading level of power loss reduction and down-sizing
“New Dual”, a New Product Line of Fifth Generation Fuji IGBT Modules U4 Series.
In 2008 Fuji
Electric released New Fuji IGBT Module for High-capacity Industrial Equipment,
a new product has been added to the line-up using FDT’s fifth generation IGBT,
U4 series
In 2010 Fuji
Electric released New Fuji High-Power 2-in-1 IGBT Module Series Designed for
Parallel Connections
In 2011 Fuji
Electric released New New V-Series Intelligent Power Modules Fuji IGBT Equipped
with 6th-Generation IGBT Chips and Capable of the Highest Efficiency in the
Industry
In 2011 Fuji
Electric released New Fuji IGBT Module for Advanced Neutral Point Clamped (NPC)
Circuits Series World’s First Module with a 3-Level Platform in a Single
Package
In 2012 Fuji
Electric announced it has developed EasyPIMTM insulated gate bipolar transistor
(Fuji IGBT) modules fitted with 6th-generation IGBT chips and plans to commence
a sales release of this new product lineup.
In 2012 Fuji
Electric released a New high-speed, low-loss, Fuji IGBT Module output type
intelligent power module incorporating various protective functions, and
completed a product series
In 2012 Fuji
Electric developed a chip which is constructed such that a Ni-plating electrode
is formed on its surface electrodes. 2nd-generation IGBT chips feature an
optimized surface trench cell structure, and employ a new field stop structure.
Diode chips incorporate an optimized anode layer structure and utilize FZ wafers
to improve forward characteristics and improve chip reliability. These
improvements make it possible to reduce Fuji IGBT and diode chip sizes,
increase system output, and facilitate miniaturization.
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