IGBT in Washing Machine Agitator

Electric automatic washing machines are now common in homes for the cleaning of daily household laundry. Washing machines were developed to eliminate the drudgery of scrubbing and rubbing to remove dirt from clothes. Electric washing machines were advertised and discussed in newspapers as early as 1904. The first automatic washing machine was introduced by Bendix in 1937. Sixty percent of the 25 Million wired homes in the United States had an electric washing machine by 1940. The annual sales for washing machines have grown to more than 58 million units worldwide by 2003. Many of these units are front loaders. Early automatic washing machines utilized mechanical means for making any changes in impeller/drum speed. Since the 1970s, electronic control of motor speed has become a common feature of most washing machines. Modern automatic washing machines provide many sophisticated features to handle the safe cleaning of a wide range of fabrics with a variety of soil removal requirements. The soil removal in an automatic electric washing machine is performed by a process of agitation of the clothes. The agitator is controlled using IGBT-based motor control modules. The direction of rotation of the motor and its speed can be regulated by using the power delivered via the IGBTs. Inverter control with IGBTs reduces wash/spin noise and vibration, and enables adjustment of the amount of water and motor torque to suit the washing load.

Puertos de controladores de poder integrado de POWER INTEGRATIONS

Los nuevos controladores de compuerta IGBT SCALE-2 de Power Integrations incluyen aislamiento galvánico, protección y conversión DC / DC en un solo módulo, y son adecuados para impulsar mosfets de potencia y dispositivos basados ​​en nuevos materiales tales como carburo de silicio (SiC) que operan a frecuencias de conmutación A 500 kHz.

Estan disponible a través de los implementos tipo  Mouser, cada tipo se basa en un conjunto de chips asic que integra la funcionalidad completa de un núcleo de controlador de puerta de canal dual en una interfaz de lógica a controlador de chip de lado primario y un controlador de puerta inteligente de chip secundario.

Están disponibles con capacidades de voltaje de bloqueo de 600V a 6,500V y de 1W a 20W por unidad de canal.

Para asegurar un rendimiento óptimo para la conducción directa de elementos DMOS externos de tipo n, las etapas de pre-excitador de cada uno de los módulos incorporan resistencias de compuerta separadas para un control independiente de la funcionalidad de encendido / apagado.

Existen opciones de canal único y doble, y se esperan aplicaciones en el sector industrial, control de motores, transmisión de energía, tracción, solar, eólica y automotriz.

Insulated Gate Bipolar Transistor (IGBT) Market - Research and Development to be Primary Focus of Industry Players

Insulated Gate Bipolar Transistor (IGBT) is a power semiconductor device and majorly finds application in switch, pulse modulation and phase control among others. This device competes with other power semiconductor devices including power MOSFETs, Silicon-Carbide (SiC), Gallium-Nitride (GaN). IGBT has been gaining demand owing to lower switching losses and higher reliability, which highlights features including higher efficiency and better thermal performance. The increasing focus and increased investments in R&D on IGBT chip and module optimization to reduce power consumption, improve chip density, thermal resistivity and efficiency would further strengthen the position of IGBT power semiconductor market.

IGBT is sold either as discrete device or as a module. The major applications of IGBT include motor drives, inverters, uninterruptible power supply (UPS), electric and hybrid electric vehicles (EV/HEV), industrial systems, consumer electronics, and medical devices. Green energy sector including wind turbines and solar photovoltaic (PV) in particular gaining significant growth in demand driven by rapid growth in green energy market itself that is leading to more wind turbine installations and more PV inverters being sold. Moreover, demand for EV/HEV is gaining significant traction and is expected to lead to high growth of IGBT market in coming future.

Over the coming years, the replacement of aging power infrastructure in developed regions and increased demand for smart grids would further boost the demand of IGBT and represents a significant opportunity. A major challenge to growth of IGBT is higher cost of the device as compared to power MOSFETs. Europe was the leading market for IGBT followed by Asia Pacific. North America is witnessing significant growth in demand owing to growth of green energy and EV/HEV markets.

Some of the key players in IGBT market include Infineon Technologies AG, Fujitsu Ltd., NXP Semiconductors N.V., STMicroelectronics N.V., Toshiba Corporation, Vishay Intertechnology, Inc., Renesas Electronics Corporation, ROHM Co. Ltd., Fairchild Semiconductor International, Inc., and Fuji Electric Co. Ltd among others.

Transparency Market Research (TMR) is a global market intelligence company, providing global business information reports and services. Our exclusive blend of quantitative forecasting and trends analysis provides forward-looking insight for thousands of decision makers. TMR’s experienced team of Analysts, Researchers, and Consultants, use proprietary data sources and various tools and techniques to gather and analyze information.

IGBT Market Growth with Worldwide Industry Analysis to 2025

IGBT Market Overview

Insulated Gate Bipolar Transistor formally known as IGBT is a power electronic semiconductor device. This device have its major application in switches, phase control and pulse modulation because of its high efficiency and fast switching. Electric power is a basic requirement of modern society and absence of electricity will create a huge loss and damage to human life as well as society. IGBT helps in reducing the congestion in power supply which will results into smooth electricity supply. IGBT have applications across various industrial verticals because of high power efficiency, ability to work in low power and high blocking voltage. IGBT is coming into focus because of its ability to lower switching loss which reduces thermal stress on electric device and results into extended device life and provides greater reliability. This market is very attractive and projected to grow rapidly because of increasing investment in Research and development of IGBT chips, module optimization for reduction in power consumption, modified chip density and thermal resistivity. These all features of IGBT are helping in strengthening the market position of IGBT power electronic semiconductor device market.

IGBT Market Dynamics

Global IGBT market is currently in its growth stage and shows significant potential across various industrial verticals. Major factors which are driving the growth of global IGBT market are increasing demand of replacement of old power infrastructures in developed regions such as North America and Europe, increasing government incentives and growing need of improved power cycling capacity and thermal capacity. Apart from these, increasing demand of energy efficient electronic devices, IGBT’s ability to improve efficiency of several electronics devices and also ability to play important role in technological advancement of power electronic has further fuelled this market growth. Factors which are restraining the growth of global IGBT market are lack of awareness, high cost, high initial investment, lack of stable characteristic of device in high temperature and economic slowdown. However, this restraints are expected to minimize their impact on market for long run. Global IGBT market have opportunity in future with deployment of smart grid, which will helps in boosting global IGBT market.

IGBT Market Segmentation

Global IGBT market is segmented on the basis of applications, types and regions. On the basis of applications the global IGBT market is sub segmented into electric and hybrid electric vehicle (EV/HEV), industrial motor drives, traction, transportation, HVAC, renewable energy, UPS, series compensation and other applications. Among all this applications demand of EV/HEV is estimated to lead growth of global IGBT market during forecasted period. Rapid growth in green energy sector is also boosting the global IGBT market. On the basis of types the market is sub segmented into IGBT module and discrete IGBT.

Geographically, the IGBT market is sub segmented into seven global regions, North America, Latin America, Asia – Pacific (excluding Japan), Japan as a separate region, Western Europe, Eastern Europe and Middle East and Africa Region. Europe region is dominating the present global IGBT market in terms of market value with Germany and U.K leading the market growth. Asia – Pacific is estimated to be fastest growing region during forecasted period with technological development in china and Japan market is also expected to grow for IGBT. North America and other remaining regions are also projected to be very promising market for IGBT. Demand in Middle East region will further fuelled the global IGBT market growth.

IGBT Market Key Players

Key players of Global IGBT market includes Fujitsu Ltd., Infineon Technologies AG, STMicroelectronics N.V., NXP Semiconductors N.V., Vishay Intertechnology, Fairchild Semiconductor International, Inc., Toshiba Corporation, Inc., ROHM Co. Ltd., Fuji Electric Co. Ltd and Renesas Electronics Corporation, among others. These key players are following trend of large scale collaborations and partnership. These strategies will be beneficial for them in expanding their global footprints and increasing global market share.

Future Market Insights (FMI) is a leading market intelligence and consulting firm. We deliver syndicated research reports, custom research reports and consulting services, which are personalized in nature. FMI delivers a complete packaged solution, which combines current market intelligence, statistical anecdotes, technology inputs, valuable growth insights, an aerial view of the competitive framework, and future market trends.

IGBT Module Market 2017-2021 - Size, Shares & Trends Analysis by Regions and Growth Forecasts

IGBT Module Market research report is a professional and in-depth study on the current state of this market. Various definitions and classification of the industry, applications of the industry and chain structure are given. Present day status of the IGBT Module market in key regions is stated and industry policies and news are analysed.

In depth analysis of an industry is a crucial thing for various stakeholders like investors, CEOs, traders, suppliers and others. The IGBT Module industry research report is a resource, which provides technical and financial details of the industry.

Next part of the IGBT Module market analysis report speaks about the manufacturing process. The process is analysed thoroughly with respect to three points, viz. raw material and equipment suppliers, various manufacturing associated costs (material cost, labour cost, etc.) and the actual process.

Top Key Players of IGBT Module Market:

·         Infineon

·         Vishay

·         Semikron

·         Fuji

·         ABB

·         Renesas

·         Fairchild

·         Littelfuse

·         STMicroelectronics

·         Toshiba

Split by applications, this report focuses on sales, market share and growth rate of IGBT Module in each application, can be divided into:

·         Electric Vehicle

·         Windmill converter

·         Medical

·         Telecom Power Supply

·         Household appliances

·         Others

After the basic information, the report sheds light on the production. Production plants, their capacities, production and revenue are studied. The IGBT Module market consumption for major regions is given. Also, the IGBT Module industry growth in various regions and R&D status are also covered such as:

·         United States

·         China

·         Europe

·         Japan

Split by product type, with production, revenue, price, market share and growth rate of each type, can be divided into:

·         NF series

·         NFH series

·         Others

Further in the report, the IGBT Module industry is examined for price, cost and gross value. These three points are analysed for types, companies and regions. In continuation with this data sale price is for various types, applications and region is also included.

To provide information on competitive landscape, this report includes detailed profiles of IGBT Module market key players. For each player, product details, capacity, price, cost, gross and revenue numbers are given. Their contact information is provided for better understanding.

IGBT Chip Market 2016 - Production, Sales, Supply, Demand, Analysis & Forecast to 2021

IGBT Chip Market report focuses on the major drivers and restraints for the key players. It also provides granular analysis of the market share, segmentation, revenue forecasts and geographic regions of the market.  The IGBT Chip Market research report is a professional and in-depth study on the current state of the IGBT Chip Industry.

The IGBT Chip market overview is given in the first three chapters of this report. Definitions and classifications of the market are explained in this part and industry chain structure is explained. Various policies and news are also included. Various costs involved in the production of IGBT Chip are discussed further. This includes labour cost, depreciation cost, raw material cost and other costs.

Along with this, the production process is analysed with respect to various aspects like, manufacturing plant distribution, capacity, commercial production, R&D status, raw material source and technology source. This provides the basic information about the IGBT Chip industry.

Further in the IGBT Chip Sales market research report, following points are included along with in-depth study of each point:

·         Production Analysis- Production of the IGBT Chip is analysed with respect to different regions, types and applications. Here, price analysis of various IGBT Chip market key players is also covered.

·         Sales and Revenue Analysis- Both, sales and revenue are studied for the different regions of the global IGBT Chip market. another major aspect, price, which plays important part in the revenue generation is also assessed in this section for the various regions.

·         Supply and Consumption- In continuation with sales, this section studies supply and consumption for the IGBT Chip market. This part also sheds light on the gap between supple and consumption. Import and export figures are also given in this part.

·         Competitors- In this section, various IGBT Chip industry leading players are studied with respect to their company profile, product portfolio, capacity, price, cost and revenue.

 This includes following firms:

·         Infineon

·         Fairchild Semiconductor

·         ON Semiconductor

·         STMicroelectronics

·         Renesas Electronics

Other analyses- Apart from the aforementioned information, trade and distribution analysis for the IGBT Chip market, contact information of major manufacturers, suppliers and key consumers is also given. Also, SWOT analysis for new projects and feasibility analysis for new investment are included.

Regions covered in the report:

·         North America

·         China

·         Europe

·         Japan

·         India

·         Southeast Asia

With the help of supply and consumption data, gap between these two is also explained.

Both established and new players in the IGBT Chip industry can use this report for complete understanding of the market.

IGBT Chip Market Research Report Now Available at Research Corridor

Research Corridor has published a new research study titled “IGBT Chip Market – Growth,Share, Opportunities, Competitive Analysis and Forecast, 2015 – 2022”. The IGBT Chip market report studies current as well as future aspects of the IGBT Chip Market based upon factors such as market dynamics, key ongoing trends and segmentation analysis. Apart from the above elements, the IGBT Chip Market research report provides a 360-degree view of the IGBT Chip industry with geographic segmentation, statistical forecast and the competitive landscape.

Geographically, the IGBT Chip Market report comprises dedicated sections centering on the regional market revenue and trends. The IGBT Chip market has been segmented on the basis of geographic regions into North America, Europe, Asia Pacific and Rest of the World (RoW). The RoW segment consists Latin America and the Middle East & Africa. The Igbt Chip market has been extensively analyzed on the basis of various regional factors such as demographics, gross domestic product (GDP), inflation rate, acceptance and others. IGBT Chip Market estimates have also been provided for the historical years 2013 & 2014 along with forecast for the period from 2015 – 2022.

The research report also provides a comprehensive understanding of IGBT Chip Market positioning of the major players wherein key strategies adopted by leading players has been discussed. The IGBT Chip industry report concludes with the Company Profiles section which includes information on major developments, strategic moves and financials of the key players operating in IGBT Chip market.

IGBT Chip Market Trends and Prediction by Leading Manufacturers according to its Application and Types

IGBTChip Market research report is a professional and in-depth study on the current state of this market. Various definitions and classification of the industry, applications of the industry and chain structure are given. Present day status of the IGBT Chip market in key regions is stated and industry policies and news are analysed.

In depth analysis of an industry is a crucial thing for various stakeholders like investors, CEOs, traders, suppliers and others. The IGBT Chip industry research report is a resource, which provides technical and financial details of the industry.

Next part of the IGBT Chip market analysis report speaks about the manufacturing process. The process is analysed thoroughly with respect to three points, viz. raw material and equipment suppliers, various manufacturing associated costs (material cost, labour cost, etc.) and the actual process.

Major Key Players are Analysed in the IGBT Chip Market Report:

·         Infineon

·         Fairchild Semiconductor

·         ON Semiconductor

·         STMicroelectronics

·         Renesas Electronics

·         Toshiba

·         ROHM

·         Vishay

·         Hitachi

·         Fair-Rite Asia

After the basic information, the report sheds light on the production. Production plants, their capacities, production and revenue are studied. The IGBT Chip market consumption for major regions is given. Also, the IGBT Chip industry growth in various regions and R&D status are also covered such as:

·         United States

·         China

·         Europe

·         Japan

Further in the report, the IGBT Chip industry is examined for price, cost and gross value. These three points are analysed for types, companies and regions. In continuation with this data sale price is for various types, applications and region is also included.

To provide information on competitive landscape, this report includes detailed profiles of IGBT Chip market key players. For each player, product details, capacity, price, cost, gross and revenue numbers are given. Their contact information is provided for better understanding

IGBT Chip Market Reports and Cost Analysis by Manufacturers

IGBT Chip Market research report is a professional and in-depth study on the current state of this market. Various definitions and classification of the industry, applications of the industry and chain structure are given. Present day status of the IGBT Chip market in key regions is stated and industry policies and news are analysed.

In depth analysis of an industry is a crucial thing for various stakeholders like investors, CEOs, traders, suppliers and others. The IGBT Chip industry research report is a resource, which provides technical and financial details of the industry.

Next part of the IGBT Chip market analysis report speaks about the manufacturing process. The process is analysed thoroughly with respect to three points, viz. raw material and equipment suppliers, various manufacturing associated costs (material cost, labour cost, etc.) and the actual process.

Major Key Players are Analysed in the IGBT Chip Market Report:

·         Infineon

·         Fairchild Semiconductor

·         ON Semiconductor

·         STMicroelectronics

·         Renesas Electronics

·         Toshiba

·         ROHM

·         Vishay

·         Hitachi

·         Fair-Rite Asia

After the basic information, the report sheds light on the production. Production plants, their capacities, production and revenue are studied. The IGBT Chip market consumption for major regions is given. Also, the IGBT Chip industry growth in various regions and R&D status are also covered such as:

·         United States

·         China

·         Europe

·         Japan

Further in the report, the IGBT Chip industry is examined for price, cost and gross value. These three points are analysed for types, companies and regions. In continuation with this data sale price is for various types, applications and region is also included.

To provide information on competitive landscape, this report includes detailed profiles of IGBT Chip market key players. For each player, product details, capacity, price, cost, gross and revenue numbers are given. Their contact information is provided for better understanding.

Fuji Electric Announces Release of New High-Speed Discrete IGBT Series

January 20, 2016

Edison, NJ – Fuji Electric has added a new lineup of power semiconductors to its product portfolio with the “High-Speed W” Series of high-speed discrete IGBTs*.   The new product series utilizes a thinner IGBT chip for miniaturization, thereby reducing power loss (turnoff loss) in switching operation by approximately 40% compared to conventional products (High-Speed V Series). This contributes to energy saving and power cost reduction of the devices on which the products are mounted. Loss in switching operation has also been reduced (suppressed heat generation) for compatibility with higher switching frequencies (20 to 100 kHz) compared to conventional products (around 20 kHz).

 “The introduction of the High-Speed W Series is a valuable addition to our product portfolio as it offers our customers advanced features that they need to compete in today’s market,” said Jeff Knapp, General Manager of Fuji Electric’s Semiconductor Dept. “The new IGBT allows the ability to downsize the peripheral parts such as coils and transformers within the system and therefore contributes to the overall downsizing of the equipment itself, leading to a reduction in the total cost of ownership.”

The company cites the increasing global demand for energy in recent years as the driving force behind the development of the High-Speed W Series.  The need for the energy-saving performance of industrial and communications equipment, as well as the demand for downsizing and space-saving of the equipment itself spurred them to introduce a high-speed discrete IGBT that responded to these needs.

*IGBT: Insulated Gate Bipolar Transistor

About Fuji Electric Corp. of America

Fuji Electric Corp. of America is a wholly owned subsidiary of Fuji Electric Co., Ltd., and has been responsible for sales and distribution of the company’s products since 1970.  Fuji Electric Co., Ltd. began developing power electronics equipment in 1923, and is a global leader in industrial products ranging from semiconductors, HMIs, power supply, and power generation equipment to AC drives and uninterruptible power systems.  For more information please visit www.americas.fujielectric.com or follow us on Twitter @FujiElectricFEA.

Media Contact:

Doretta Caprarola

Fuji Electric Marketing Manager

(201) 490-3933

dcaprarola@fujielectric.com

Sales Contact:

Jeff Knapp

Fuji Electric General Manager

(201) 880-2145)

jknapp@fujielectric.com